Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor memory device and method for manufacturing semiconductor memory device

A memory and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as deterioration of operating characteristics of semiconductor memory devices

Pending Publication Date: 2022-04-19
SK HYNIX INC
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the operating characteristics of the semiconductor memory device may deteriorate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor memory device and method for manufacturing semiconductor memory device
  • Semiconductor memory device and method for manufacturing semiconductor memory device
  • Semiconductor memory device and method for manufacturing semiconductor memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Specific structural or functional descriptions disclosed herein are merely illustrative for the purpose of describing embodiments according to the concept of the present disclosure. Embodiments according to the concept of the present disclosure may be implemented in various forms and should not be construed as limited to the embodiments set forth herein.

[0024] Embodiments provide a semiconductor memory device and a method of manufacturing the semiconductor memory device that can improve operating characteristics of the semiconductor memory device.

[0025] figure 1 is a circuit diagram illustrating a memory block of a semiconductor memory device according to an embodiment of the present disclosure.

[0026] refer to figure 1 , the semiconductor memory device may include a plurality of memory blocks BLK, each of which may include a plurality of memory cell strings MS1, MS2, and MS3 connected to a common source layer CSL and a bit line BL.

[0027] Each of the memor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor memory device and a manufacturing method of the semiconductor memory device. A semiconductor memory device includes: a channel structure including a first pillar portion and a second pillar portion extending from the first pillar portion; a barrier insulating layer surrounding a sidewall of the first pillar portion; a data storage layer disposed between the first pillar portion and the barrier insulating layer; an upper selection line overlapping an end portion of the barrier insulating layer facing an extending direction of the second pillar portion and an end portion of the data storage layer, the upper selection line surrounding a sidewall of the second pillar portion; and a tunnel insulating layer disposed between the first pillar portion and the data storage layer, the tunnel insulating layer extending between the second pillar portion and the upper selection line.

Description

technical field [0001] The present disclosure may generally relate to a semiconductor memory device and a method of manufacturing the semiconductor memory device, and more particularly, to a three-dimensional semiconductor memory device and a method of manufacturing the three-dimensional semiconductor memory device. Background technique [0002] A semiconductor memory device includes a plurality of memory cells capable of storing data. Memory cells of a three-dimensional semiconductor memory device may be three-dimensionally arranged. When manufacturing a three-dimensional semiconductor memory device, malfunctions may occur due to various reasons. Therefore, the operating characteristics of the semiconductor memory device may be degraded. Contents of the invention [0003] According to an aspect of the present disclosure, a semiconductor memory device may include a channel structure, a blocking insulating layer, a data storage layer, an upper selection line, and a tunnel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11568H01L27/11582
CPCH10B43/30H10B43/27H10B43/35H10B43/10H10B43/40H01L21/76877H01L29/792H01L29/66833H01L29/4234H01L25/0657H10B43/50H10B41/27H10B41/10H10B41/40
Inventor 李南宰
Owner SK HYNIX INC