Method and device for improving SSD data retentivity, computer equipment and storage medium

Abstract

The invention relates to a method and a device for improving SSD (Solid State Disk) data retentivity, computer equipment and a storage medium, and the method comprises the following steps: acquiring data issued by a host to obtain write-in data; judging whether the SSD is in an initial state of a life cycle or not; if yes, whether the valid data volume in the SSD exceeds a threshold value or not is judged; if not, distributing the physical blocks in the unit storage mode, and storing the written data; if yes, moving the data in the physical blocks in the partial unit storage mode to the physical blocks in the multi-bit storage mode, and storing the write-in data; and if not, allocating the physical blocks in the multi-bit storage mode, and storing the written data. According to the method, different storage modes are adopted for the data according to the data retention requirements of different life cycles of the SSD, so that the data reliability is effectively improved; when the SSD reaches the service life and enters the read-only mode, effective data are transferred to the physical block in the unit storage mode through indication of the host.

Description

technical field [0001] The present invention relates to the technical field of SSD data retention, in particular to a method, device, computer equipment and storage medium for improving SSD data retention. Background technique [0002] SSD (Solid State Drive) has been widely used in various occasions. Currently, in the PC market, it has gradually replaced the traditional HDD, providing users with a better experience in terms of reliability and performance. The SSD uses NAND as the storage medium, and the specific value 0 / 1 is expressed by the different voltage states of the Cell. With the evolution of NAND technology, the number of digits that can be represented by each Cell has also evolved from 1bit (SLC) to 2bit (MLC), 3bit (TLC), 4bit (QLC) and so on. Correspondingly, the voltage state subdivision interval of each Cell increases, which is more prone to errors. [0003] In typical usage scenarios, SSDs require long data retention: when leaving the factory, the host pre-...

AI Technical Summary

Problems solved by technology

Due to the physical characteristics of NAND, when the power is off and stored, the voltage of its Cell will shift, which will lead to data errors

When the voltage interval of the Cell is divided into more (the more digits represented), the failure scenario is more obvious, resulting in the inability to read back the data correctly

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