Supercharge Your Innovation With Domain-Expert AI Agents!

Method of writing data in non-volatile memory device, non-volatile memory device, and method of operating memory system

A technology for non-volatile storage and writing of data, applied in static memory, read-only memory, digital memory information, etc., can solve problems such as reliability reduction, and achieve the effect of enhancing reliability

Pending Publication Date: 2022-06-03
SAMSUNG ELECTRONICS CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Recently, as the degree of integration of nonvolatile memory devices increases, reliability associated with degradation and / or degradation of data stored in nonvolatile memory devices gradually decreases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of writing data in non-volatile memory device, non-volatile memory device, and method of operating memory system
  • Method of writing data in non-volatile memory device, non-volatile memory device, and method of operating memory system
  • Method of writing data in non-volatile memory device, non-volatile memory device, and method of operating memory system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] Various example embodiments will be described more fully with reference to the accompanying drawings, in which example embodiments are shown. This disclosure may, however, be embodied in many different forms and should not be construed as limited to the example embodiments set forth herein. Throughout this application, the same reference numbers refer to the same elements.

[0034] figure 1 is a flowchart illustrating a method of writing data in a nonvolatile memory device according to example embodiments.

[0035] refer to figure 1 , a method of writing data according to example embodiments is performed by a nonvolatile memory device including a plurality of memory cells. The detailed configuration of the nonvolatile memory device and the memory system including the nonvolatile memory device will refer to Figure 2 to Figure 7 describe.

[0036] In a method of writing data in a nonvolatile memory device according to example embodiments, a write command, a write ad...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method of writing data in a non-volatile memory device, a non-volatile memory device performing the method of writing data, and a method of operating a memory system using the method of writing data are provided. In a method of writing data in a non-volatile memory device, a write command, a write address, and write data to be programmed are received. When offset information representing a verify level is provided, the offset information is received. When it is determined that write data corresponds to a distributed degradation mode by checking an input / output (I / O) mode of the write data, offset information is provided. When the offset information is received, the write data is programmed based on the offset information such that at least one state among a plurality of states included in a threshold voltage distribution of the memory cells storing the write data changes.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims priority to Korean Patent Application No. 10-2020-0163790 filed with the Korean Intellectual Property Office (KIPO) on November 30, 2020, the contents of which are incorporated herein by reference in their entirety. technical field [0003] Example embodiments relate generally to semiconductor integrated circuits, and more particularly to methods of writing data in a nonvolatile memory device, nonvolatile memory devices performing the method of writing data, and operations using the method of writing data method of storage system. Background technique [0004] Semiconductor memory devices can generally be divided into two categories depending on whether they retain stored data when disconnected from a power source. These categories include volatile memory devices that lose stored data when powered off and non-volatile memory devices that retain stored data when powered off. Volatile memory devi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/34
CPCG11C16/10G11C16/3404G11C16/0483G11C16/3459G11C11/5671G11C11/5628G11C16/349G11C7/1006G11C16/26G11C16/3418G11C16/08G11C16/30G11C16/3495G11C16/102
Inventor 李侊祐金灿河李熙元
Owner SAMSUNG ELECTRONICS CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com