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Method for producing silicon single crystal

A manufacturing method and technology of silicon single crystal, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc.

Pending Publication Date: 2022-06-10
GLOBALWAFERS JAPAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008]However, in the manufacturing process of semiconductor devices, if the above-mentioned oxygen precipitates exist in the active layer, there is a concern that it will adversely affect the electrical characteristics

Method used

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  • Method for producing silicon single crystal
  • Method for producing silicon single crystal
  • Method for producing silicon single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0105] Table 2 shows the ratio t / T of the upper, middle and lower parts of the crucible in Examples 3, 4 and Comparative Example 2, and the deviation of the axial oxygen concentration of the single crystal pulled under these conditions.

Embodiment 2

[0106] in addition, Figure 7 The graph of is showing the change of single crystal oxygen concentration in Examples 3, 4 and Comparative Example 2. exist Figure 7 In the graph, the vertical axis is the oxygen concentration (×10 18 / cm 3 ), and the horizontal axis is the curing rate.

[0107] (Table 2)

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PUM

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Abstract

Provided is a method for producing a silicon single crystal with which it is possible to produce a silicon single crystal having a more uniform oxygen concentration distribution in the longitudinal direction of the silicon crystal. A method for producing a silicon single crystal, in which a silicon single crystal is pulled up from a silicon melt accommodated in a quartz glass crucible (3) by a Czochralski method, in which the ratio (t / T) of the thickness (t) of the transparent inner layer to the thickness (T) of the side wall of the quartz glass crucible is adjusted from the upper part to the lower part of the side wall of the quartz glass crucible, and the silicon single crystal is pulled up from the silicon melt accommodated in the quartz glass crucible (3) by a Czochralski method. The variation in oxygen concentration in the crystal growth axis direction of the pulled silicon single crystal is 20% or less.

Description

technical field [0001] The present invention relates to a method for producing a silicon single crystal by the Czochralski method (Czochralski method: CZ method), and to a method for producing a silicon single crystal capable of producing a silicon single crystal having a more uniform oxygen concentration in the crystal length direction. Background technique [0002] The cultivation (growth, growth) of the silicon single crystal based on the CZ method is carried out as follows: Figure 8 The quartz glass crucible 51 in the shown chamber (chamber) 50 is filled with polycrystalline silicon as a raw material, and the polycrystalline silicon is heated and melted by a heater 52 arranged around the quartz glass crucible 51 to make a silicon melt M, and then the A seed crystal (seed) P mounted on a seed chuck (seed chuck) is immersed in the silicon melt M, and the seed crystal is pulled while rotating the seed chuck and the quartz glass crucible 51 in the same direction or in the op...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B15/10C30B29/06
CPCC30B15/20C30B15/10C30B29/06Y02P40/57
Inventor 松村尚
Owner GLOBALWAFERS JAPAN