Semiconductor device structure

Abstract

The invention provides a semiconductor device structure. The semiconductor device structure includes first and second source / drain epitaxy features, a first gate electrode layer disposed between the first and second source / drain epitaxy features, third and fourth source / drain epitaxy features, a second gate electrode layer disposed between the third and fourth source / drain epitaxy features, and a second gate electrode layer disposed between the third and fourth source / drain epitaxy features. Fifth and sixth source / drain epitaxial features disposed on the first and second source / drain epitaxial features; and a third gate electrode layer disposed between the fifth and sixth source / drain epitaxial features. The third gate electrode layer is electrically connected to the second source / drain epitaxial feature. The structure includes seventh and eighth source / drain epitaxial features disposed on third and fourth source / drain epitaxial features. The second gate electrode layer is disposed between the seventh and eighth source / drain epitaxial features.

Description

technical field [0001] The present disclosure relates to a semiconductor device, and more particularly, to a semiconductor device having vertically stacked field effect transistors. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Advances in technology in IC materials and design have produced several generations of ICs, each with smaller and more complex circuits than the previous generation. As ICs evolve, functional density (ie, the number of interconnects per unit chip area) typically increases while geometry size (ie, the smallest component (or line segment) that can be created using a manufacturing process) decreases . This scaling down process often provides benefits in the form of increased production efficiency or reduced associated costs. This scaling also increases the complexity of processing and manufacturing ICs. [0003] In the quest for higher device density, better performance, and lower...

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Problems solved by technology

This scaling also increases the complexity of handling and manufacturing the IC

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