Double-gate transistor memory cell, data read-write method, manufacturing method and memory

Abstract

The invention discloses a double-gate transistor memory cell, a data read-write method, a manufacturing method and a memory, and the double-gate transistor memory cell comprises a first gate; the first dielectric layer is arranged on the top surface of the first grid electrode; the channel layer is arranged on the top surface of the first dielectric layer; the source electrode and the drain electrode are arranged on the top surface of the first dielectric layer and located on the two sides of the channel layer; wherein the first dielectric layer comprises a ferroelectric layer, and the ferroelectric layer is located on the bottom surface of the source electrode and the bottom surface of the drain electrode; the second dielectric layer is arranged on the top surface of the channel layer; and the second grid electrode is arranged on the top surface of the second dielectric layer. According to the invention, a transistor is used as a memory unit, so that the defect that a memory capacitor limits the reduction of the area of the memory unit is eliminated, and the ferroelectric memory can be well applied to a three-dimensional integration technology.

Description

technical field [0001] The present invention relates to the technical field of storage, in particular to a dual-gate transistor storage unit, a data reading and writing method, a manufacturing method and a memory. Background technique [0002] Ferroelectric material refers to a material with ferroelectric effect. It has ferroelectricity and piezoelectricity, that is, it can spontaneously polarize within a certain temperature range, and if pressure is applied to the material in a certain direction, its internal Polarization occurs, creating a charge on the surface. Ferroelectric memory is a storage structure using ferroelectric materials, which can achieve the purpose of non-volatile storage. It is widely used in low-voltage, low-power applications, and can be used as a stand-alone memory or embedded in microcontrollers and microprocessors. Its excellent characteristics make it a potential replacement for Electrically Erasable Programmable Read-Only Memory (EEPROM), Flash (...

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Problems solved by technology

[0006] In view of the deficiencies in the prior art above, the object of the present invention is to provide a double-gate transistor storage unit, a data reading and writing method, a manufacturing method and a storage device, so as to solve the integration limitation of the storage capacitor in the integration process of the existing ferroelectric storage device The problem of the minimum area of ​​the storage unit

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