Process for ashing organic materials from substrates
A technology of organic substances and substrates, which is applied in the direction of photomechanical equipment, photographic process of patterned surface, cleaning/polishing of conductive patterns, etc.
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no. 1 approach
[0024] One embodiment is a plasma ashing process using any of the conventional overflow, barrel, straight-through and downstream and other types of ashing devices known in the art. In this first embodiment, a first set of gases is used to generate the plasma. Specifically, the reaction gas contains only sulfur trioxide. Sulfur trioxide is fed into the plasma formation chamber, which is first evacuated and maintained at a suitable vacuum. SO 3The flow rate is controlled with a controller in the process. Microwave energy is fed into a plasma-forming chamber where a plasma is generated from reactive gases. As a result of the plasma-generated active species flowing down into the processing chamber, the organic film on the substrate surface comes into contact with the organic film as a result of the interaction between the organic film and the plasma, or is removed by a method known in the art , or chemically change so that the film can be removed in the next step in the proces...
no. 2 approach
[0026] Another embodiment of the present invention is a plasma ashing process implemented by any one of conventional overflow type, barrel type, straight-through type and downstream type and other types of ashing devices. In a second embodiment, a second set of gases is used to generate the plasma. Specifically, the reaction gas contains sulfur trioxide and an auxiliary gas. Sulfur trioxide and auxiliary gases are fed into the plasma formation chamber, which has previously been evacuated and maintained at a suitable vacuum. The concentration of sulfur trioxide in the second group of reaction gases is approximately in the range of 1-95% (volume), and the auxiliary gas accounts for the rest (99-5% (volume)).
[0027] The flow of each gas is controlled with a controller in the process. Microwave energy is fed into a plasma formation chamber where a plasma is generated from the reactant gases. The active species generated as a plasma flows downwards into the processing chamber ...
no. 3 approach
[0030] Another embodiment of the present invention is a plasma ashing process implemented by any one of conventional overflow type, barrel type, straight-through type, downstream type and other types of ashing devices. In a third embodiment example a third set of gases is used to generate the plasma. Specifically, the reaction gas is composed of sulfur trioxide and at least two auxiliary gases. Sulfur trioxide and auxiliary gases are fed into the plasma formation chamber, which has been evacuated and maintained at a suitable vacuum. The concentration of sulfur trioxide in the third group of reaction gases is about in the range of 1-95% (volume), and the auxiliary gas constitutes the balance (99-5% (volume)).
[0031] The flow of gas is controlled with a controller in the process. Microwave energy is delivered into a plasma formation chamber where a plasma is generated from the reactant gases. The active species generated as a plasma flows down the processing chamber and bri...
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