Orgnic electroluminescence device and its preparation method

An electroluminescent device, an organic technology, applied in the direction of electroluminescent light source, electric solid device, semiconductor/solid device manufacturing, etc., can solve the problems of pixel short circuit, large equipment investment, organic film damage, etc., to reduce reflection To suppress the voltage, reduce the production cost, the effect of low lighting voltage

Inactive Publication Date: 2004-12-22
BEIJING VISIONOX TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] ① The baking temperature (120°C) of photoresist will damage the organic film;
[0005] ② Solvents, developers, and corrosive solutions of photoresist will damage the organic film;
[0010] (1) The isolation column is composed of three layers of inorganic films (silicon nitride 3-silicon dioxide 4-silicon nitride 5), and the PECVD method is required to deposit the film. The PECVD equipment is expensive, the film formation process is complicated, and the process conditions are not easy to control. As a result, in large-scale production, the yield is low, the cost is high, and the investment in equipment is huge, so it is difficult to accept the construction of domestic production lines;
[0011] (2) Silane, nitrogen and oxygen need to be introduced into the reaction furnace of PECVD equipment to form silicon nitride and silicon dioxide through chemical reactions. Silane is poisonous and will adversely affect the health of the staff. The reaction furnace of the equipment and The gas pipeline needs to be well sealed, and the gas discharge should pay attention to environmental protection, which will increase the production cost;
[0012] (3) The shape of the isolation column is realized by one exposure, one wet etching of silicon dioxide 4 and two dry etching of silicon nitride 3 and 5. The pattern preparation process is complicated, and the process conditions are not easy to control, resulting in the yield rate in mass production Low, high cost;
[0013] (4) The cross-sectional shape of the bottom silicon nitride 3 insulating layer is rectangular, and the edge is steep, and there will be an obvious edge effect when evaporating the organic functional layer 6 and the second electrode (metal layer) 7, so that the luminous point is evaporated Inhomogeneity, thereby affecting the luminous uniformity and life of the device, and part of the metal layer 7 may fall over the organic functional layer 6 and fall into the transparent conductive film (first electrode) 2 between the bottom silicon nitride 3 and the organic functional layer 6 on, causing the pixel to be short-circuited and not emitting light;
[0014] (5) The insulating layer of the underlying silicon nitride 3 is only distributed parallel to the direction perpendicular to the transparent conductive film layer (first electrode) 2, which reduces the reflection between the metal lines while separating the metal layer (second electrode) 7. To suppress the voltage, but can not reduce the reverse suppression voltage between the first transparent electrodes, so that the power consumption of the device is relatively high;
[0015] (6) Doping black dye in the spacer material can improve the contrast when the device emits light, because the bottom silicon nitride 3 can only be distributed parallel to the direction perpendicular to the transparent conductive film layer (first electrode) 2, and cannot The direction parallel to the transparent conductive film layer 2 is distributed in parallel, so the contrast of the device cannot be significantly improved

Method used

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  • Orgnic electroluminescence device and its preparation method
  • Orgnic electroluminescence device and its preparation method
  • Orgnic electroluminescence device and its preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0050] (The entire preparation process of OLEDs is carried out in the purification workshop). The ITO glass with a sheet resistance of 15Ω is ultrasonically cleaned and dried with acetone-ethanol solution (volume ratio 2:1). The ITO film thickness is 170nm. A group of parallel and separated straight lines with a line width of 400 μm were produced. Then, the first layer of insulation material PI for isolation columns is spin-coated with a film thickness of 2 μm. Lithograph PI into a network structure, that is, there are PI lines in the vertical direction to ITO and the parallel direction to ITO (between the ITO lines), and develop in 3% NaOH solution for 30s, so that the cross-section of the lines forms a positive trapezoid with a small top and a large bottom shape, with a line width of 30 μm. Bake in a convection oven at 210° C. for 30 minutes to completely cure the PI. Then continue to spin-coat the second layer of isolation column insulating material PI on this basis, with...

Embodiment 2

[0052] (The entire preparation process of OLEDs is carried out in the purification workshop). The ITO glass with a sheet resistance of 5Ω is ultrasonically cleaned and dried with acetone-ethanol solution (volume ratio 2:1). The ITO film thickness is 200nm. A group of parallel and separated straight lines with a line width of 200 μm were produced. Then spin-coat the first layer of positive photoresist AZ6112 (Clariant Co., Ltd., Japan) with a film thickness of 0.5 μm. The photolithography forms a network structure, that is, there are positive photoresist lines in the direction perpendicular to the ITO and parallel to the ITO (between the ITO lines), and the positive photoresist developer is used to develop the cross-section of the lines to form a small top and a large bottom. regular trapezoidal shape with a line width of 20 μm. Bake in a convection oven at 220° C. for 30 minutes to completely cure the positive photoresist. Then continue to spin-coat the second layer of isola...

Embodiment 3

[0054](The entire preparation process of OLEDs is carried out in the purification workshop). The ITO glass with a sheet resistance of 15Ω is ultrasonically cleaned and dried with acetone-ethanol solution (volume ratio 2:1). The ITO film thickness is 170nm. A group of parallel and separated straight lines with a line width of 600 μm were produced. Then spin-coat the first layer of isolation column insulating material photosensitive PI with a film thickness of 1 μm. The photosensitive PI is photolithographically formed into a network structure, that is, there are photosensitive PI lines in the direction perpendicular to the ITO and parallel to the ITO (between the ITO lines), and developed in a dimethylformamide developer for 50 seconds to form a cross-section of the lines. A regular trapezoidal shape with a small top and a large bottom, with a line width of 50 μm. Bake in a convection oven at 220° C. for 30 minutes to completely cure the photosensitive PI. On this basis, cont...

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Abstract

The invention belongs to the technique area of the semiconductor elements and devices. Three layers of the isolation pole are prepared on the graphics of the first electrode. The graphics of the first layer of the isolation pole is the mesh texture with the cross section being as trapezoid shape. The cross section of the lines on the second layer and the third layer of the isolation pole possess the shape with big at the upper and small at the lower. Then, the organic function layer and the second electrode are deposited in sequence. The shadow effect caused by the shape with big at the upper of the second layer and the third layer makes the second electrode possible to be partitioned. The first layer of the isolation pole being equivalent to 'insulating base' prevents the short circuit between the electrodes.

Description

technical field [0001] The invention relates to an organic electroluminescence device and a preparation method of the device, belonging to the technical field of electronic semiconductor components. Background technique [0002] Organic Electroluminescent Devices (Organic Electroluminescent Devices, hereinafter referred to as OLEDs) are generally composed of a transparent first electrode located on a transparent substrate, an organic electroluminescent medium (organic functional layer) deposited on the first electrode, and an organic electroluminescent medium (organic functional layer) located on the transparent substrate. The second electrode (metal electrode) above the organic electroluminescence medium. The transparent electrode serves as the anode of the device, and the metal electrode serves as the cathode of the device. Apply a high level to the transparent electrode and a low level to the metal electrode to make the device emit light. A group of anodes (or cathodes)...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/52H01L51/56H05B33/10H05B33/12
Inventor 邱勇杨萍邵玉暄王立铎张德强
Owner BEIJING VISIONOX TECH
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