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Ray detector

A technology of radiation detectors and devices, which is applied in the field of radiation detectors and can solve problems such as signal-to-noise ratio reduction

Inactive Publication Date: 2005-01-05
TOSHIBA MEDICAL SYST CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These are the reasons for the reduced signal-to-noise ratio

Method used

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Experimental program
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Embodiment 1

[0041] Figure 4 It is a configuration diagram of the radiation detector according to the first embodiment of the present invention. Such as Figure 4 As shown, the ray detector of the present embodiment 1 is provided with detection of incident rays, for example, an X-ray detection part 1 of X-rays and a read-out signal corresponding to the intensity of X-rays detected in the X-ray detection part. Out of the circuit part 2.

[0042] The X-ray detection section 1 has: a plurality of pixels 3 arranged in a 2-dimensional matrix; a signal line 4 for reading out signals from the pixels 3; a vertical selection for selecting signals read out from the pixels 3 Line 5; an adjustment part 6 for adjusting the signal output from the pixel 3 and an adjustment part control line 7 for controlling the adjustment part 6 in order to reduce the offset (offset) in the integration circuit to be said later.

[0043] Each pixel 3 consists of a photoelectric conversion device 31 that converts incide...

Embodiment 2

[0075] Figure 8 It is a timing chart for explaining the operation of the radiation detector of the second embodiment. Embodiment 2 differs from Embodiment 1 above in that two vertical selection lines 5 are simultaneously turned on, and signal charges are read from a pair of pixels 3 adjacent in the column direction.

[0076] In the present embodiment 2, along with making the two vertical selection lines 5 become conductive at the same time, such as Figure 8 As shown, the difference between the gate-on voltage Von.sub1 and the gate-off voltage Voff.sub1 supplied to the gate of the TFT 33 for adjustment, the difference between the gate-on voltage Von.sub1 and the gate-off voltage Voff.sub1 It is set to be twice the difference between the gate-on voltage Von.sub and the gate-off voltage Voff.sub used in the first embodiment. That is, the difference between the gate-on voltage Von.sub1 and the gate-off voltage Voff.sub1 is made to obey the expression (7).

[0077] Von.sub1-Vo...

Embodiment 3

[0080] Figure 9 is a configuration diagram of the radiation detector of Embodiment 3 of the present invention, and Figure 10 is a timing chart for explaining the operation of the radiation detector.

[0081] Embodiment 3 differs from Embodiment 1 mentioned above in that two dummy pixels 9 are provided for each of the plurality of signal lines 4 .

[0082] Such as Figure 9 As shown, the radiation detector of this embodiment 3 is equipped with an X-ray detection part 1A and a readout circuit part 2A, and the X-ray detection part 1A has: a plurality of pixels 3; a plurality of signal lines 4; a plurality of vertical selection lines 5 ; Adjustment section 6A; Adjustment section control line 7 for controlling the adjustment section 6A.

[0083] Each pixel 3 has a photoelectric conversion device 31 , a capacitor 32 and a TFT 33 for readout.

[0084] The adjustment section 6A has a plurality of dummy pixels 9 . Two dummy pixels 9 are provided for one signal line 4 . That is,...

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Abstract

A radiation detector has a plurality of charge conversion elements which are laid out in a matrix and convert incoming radiation into charges, a plurality of capacitors for storing the charges generated by the charge conversion elements, and charge read elements for reading the charges stored in the capacitors. Signals other than signals originated to charges stored in the capacitors, which are produced upon, e.g., turning on / off the charge read elements are canceled by adjustment means, thus improving the S / N ratio.

Description

technical field [0001] The present invention relates to a radiation detector using a thin film transistor (TFT) as a switching device for readout. Background technique [0002] A radiation detector using a TFT as a switching device for each pixel employs the process of repeatedly forming a thin film on one side of a glass substrate, patterning and superimposing the thin film by etching, and patterning again. method formed. [0003] Fig. 1 shows the structure of a conventional radiation detector. The radiation detector has a plurality of pixels 203 arranged in a grid. Each pixel 203 is composed of a photoelectric conversion device 102 made of selenium that can directly convert incident rays (such as X-rays) into charges, a capacitor 103 that stores the generated charges, and a TFT 101 for signal readout. The charge stored in the capacitor 103 of each pixel is read out to the integration circuit 112 through the TFT 101 and the signal line 105 . [0004] As shown in FIG. 2 ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01T1/24A61B6/00G01T1/20G01T1/29G01T7/00H01L27/14H01L27/146H01L31/09H04N1/028H04N5/32H04N7/18
CPCH04N5/378H04N5/374H04N5/361H01L27/14658H04N25/76H04N25/68H04N25/671H04N25/673H04N25/63H04N25/75
Inventor 富崎隆之本田道隆永井清一郎田中学坂口卓弥
Owner TOSHIBA MEDICAL SYST CORP