Semiconductor device

A semiconductor and device technology, applied in the field of high-performance semiconductor devices, can solve problems such as the voltage drop of semiconductor chips that cannot be solved, and achieve the effects of increasing the number of connection terminals, reducing the voltage drop, and improving the installation efficiency

Inactive Publication Date: 2005-04-13
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in the case of such a package structure, when supplementing the power supply, since the circuit formation surfaces of the semiconductor chips face each other, the power supply can only be supplied from the outer periphery of the chip, so that the problem of the voltage drop inside the semiconductor chip cannot be solved.

Method used

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  • Semiconductor device
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Examples

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no. 1 Embodiment

[0081] figure 1 (a) and (b) respectively illustrate the semiconductor device of the first embodiment of the present invention, (a) is a schematic cross-sectional view, and (b) is a partial enlarged view of (a). As shown in Figure (a), the semiconductor chip 1 is mounted with the formation surface 2 of the semiconductor element (internal circuit) facing the wiring board 7 (face down). The formation surface 2 of the semiconductor element is formed by dispersing connection terminals (conductive bumps) 4 over the entire area (for example, in an array), and is electrically connected to the wiring layer 7B of the wiring board 7 via the connection terminals 4. The wiring board 7 has wiring layers (multilayer wiring) 7B formed on both sides and inside of an insulating substrate 7A made of resin or the like, respectively, and the wiring layer is arranged on the stern corresponding to the bump 4 on the mounting side of the semiconductor chip 1 . The wiring layer 7B is led out to the back ...

no. 2 Embodiment

[0088] figure 2 (a) and (b) respectively illustrate the semiconductor device of the second embodiment of the present invention, (a) is a schematic cross-sectional view, and (b) is a partially enlarged view of (a). In the second embodiment, the semiconductor chip 1 is mounted with the back surface of the semiconductor element forming surface 2 facing the wiring board 7 (face upward). The through holes 3 in which the conductive member 15 is embedded are dispersedly arranged throughout the semiconductor chip 1, and connection terminals (conductive bumps) 5 formed on the back surface of the chip 1 through the through holes 3 are used to connect to the wiring board 7. A connecting terminal (bump) 4 similar to a general semiconductor device is formed on the outer periphery of the semiconductor element forming surface 2 of the semiconductor chip 1, and the connecting terminal 4 is electrically connected to the wiring layer 7B of the wiring board 7 via wire bonding.

[0089] In the abov...

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PUM

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Abstract

Low-cost semiconductor device that suppresses internal voltage drop. The semiconductor chip 1 is arranged so that the element forming surface 2 faces the wiring board 7, and is mounted on the wiring board via the conductive bumps 4. The wiring layer 7B is formed at a position corresponding to the bump on the chip mounting surface side of the wiring board. The wiring layer is electrically connected to the conductive bump 13 connected to the mounting substrate. Through-holes 3 for embedding conductive members 15 are provided on the outer periphery of the chip, and connection terminals 5 are formed on the conductive members 15 on the back surface of the chip. The connection terminal 5 and the wiring layer of the wiring board are connected by bonding wires 6 . Since the connection terminals are arranged on both sides of the chip, the number of connection terminals can be increased without increasing the connection density.

Description

Technical field [0001] The present invention relates to a semiconductor device with a package structure in which a conductive member is embedded in a semiconductor chip, and wiring is led out from the side of the formation surface of the semiconductor element and the side of the back surface of the semiconductor chip, and particularly to a high-performance semiconductor device with a reinforced power supply. Background technique [0002] The reduction in power supply voltage and the increase in circuit scale accompanying the refinement of semiconductor integrated circuits promote the increase in the size of semiconductor chips, and the problem of voltage drop inside semiconductor chips has become apparent. As a countermeasure, a package with a flip chip structure in which connection terminals are provided across the entire surface of a semiconductor chip and connected downward on a multilayer wiring board is becoming the mainstream. [0003] Figure 29 It is a cross-sectional vi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/12H01L21/768H01L23/31H01L23/48H01L23/52H01L25/065H01L25/07H01L25/18
CPCH01L23/3107H01L23/481H01L24/48H01L24/73H01L25/0657H01L2224/02372H01L2224/0401H01L2224/13024H01L2224/13025H01L2224/16145H01L2224/16225H01L2224/16245H01L2224/32145H01L2224/48145H01L2224/48227H01L2224/73257H01L2224/73265H01L2225/06506H01L2225/0651H01L2225/06513H01L2225/06541H01L2225/06568H01L2225/06582H01L2225/06586H01L2225/06589H01L2924/00014H01L2924/01004H01L2924/01005H01L2924/01013H01L2924/01029H01L2924/01033H01L2924/01082H01L2924/12041H01L2924/14H01L2924/15153H01L2924/1517H01L2924/15311H01L2924/1532H01L2924/181H01L2924/18161H01L2224/45099H01L2924/00H01L2924/00012H01L23/12
Inventor 杉崎吉昭
Owner KK TOSHIBA
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