Piezoelectric substrate for surface acoustic wave device and surface acoustic wave device

A surface elastic wave, piezoelectric substrate technology, applied in electrical components, chemical instruments and methods, inorganic chemistry, etc., can solve problems such as miniaturization limitations

Inactive Publication Date: 2006-04-12
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ST crystal or LT112, which were previously suitable for surface acoustic wave filters for intermediate frequencies, have SAW speeds exceeding 3000m / s (seconds), and are limited in miniaturization.

Method used

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  • Piezoelectric substrate for surface acoustic wave device and surface acoustic wave device
  • Piezoelectric substrate for surface acoustic wave device and surface acoustic wave device
  • Piezoelectric substrate for surface acoustic wave device and surface acoustic wave device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0135] Next, examples of the surface acoustic wave device of this embodiment will be described. First, a method of manufacturing the piezoelectric substrate 1 for a surface acoustic wave device of this embodiment will be described. The material of the piezoelectric substrate 1 is to use a point group 32 with Ca 3 Ga 2 Ge 4 o 14 type crystal structure; its main components are composed of Ca, Nb, Ga, Si and O, and it is composed of the chemical formula Ca 3 NbGa 3 Si 2 o 14 represents a single crystal. The growth of single crystal is carried out by the CZ method of high-frequency heating, that is, the rotary pulling method. A substrate 1 for a surface acoustic wave device was prepared by cutting out a substrate from the obtained single crystal using the cutting angle described below.

[0136] Next, a method of fabricating a surface acoustic wave device for a test will be described. As shown in FIG. 1 , in the surface acoustic wave device for testing, interdigitated ele...

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PUM

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Abstract

A surface acoustic wave device having a wider band and a smaller size. The surface acoustic wave device comprises a piezoelectric substrate (1) and a pair of interdigital electrodes (2) mounted on one major face of the piezoelectric substrate. The material of the piezoelectric substrate (1) is a single crystal belonging to point group 32, having the Ca3Ga2Ge4O14 crystal structure and major components of Ca, Nb, Ga, Si and O, and expressed by a chemical formula of Ca3NbGa3SiO14. By determining the cutting angle and the propagation direction of the substrate (1) suitably, it is possible to realize a substrate (1) which has a large electromechanical coupling coefficient effective widening the pass band and a low SAW velocity effective in reducing the size of the surface acoustic wave device.

Description

technical field [0001] The present invention relates to a piezoelectric substrate and a surface acoustic wave device used for a surface acoustic wave device in which fingers are provided on a piezoelectric substrate. Background technique [0002] In recent years, mobile communication terminal devices such as mobile phones have spread rapidly. Such a terminal device is particularly desired to be small and lightweight for portability. In order to reduce the size and weight of terminal equipment, electronic components used in the terminal equipment are also required to be small and lightweight. For this reason, surface acoustic wave devices, which are small and light in weight, are often used in the high-frequency and intermediate-frequency parts of terminal equipment, that is, surface acoustic wave filters. The surface acoustic wave device forms finger interlaced electrodes on the piezoelectric substrate for exciting, receiving, reflecting or propagating the surface acoustic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/25C01B33/20C30B29/34H03H9/02
CPCH03H9/02543
Inventor 井上宪司佐藤胜男守越广树佐藤淳
Owner TDK CORPARATION
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