Silicon fusion bonding method for MEMS bonding process

A technology of melting glass and bonding process, applied in chemical instruments and methods, semi-permeable membrane separation, electrical components, etc., can solve the problems of low production efficiency of bonding process, etc. The effect of increasing device production speed

Inactive Publication Date: 2006-10-18
北京青鸟元芯微系统科技有限责任公司
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  • Summary
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AI Technical Summary

Problems solved by technology

[0007] The main purpose of the present invention is to provide a simple and easy alternative process to solve the problem of low production efficiency of the bonding process in large-scale MEMS device production in view of the harsh requirements for raw materials and equipment in the current MEMS anodic bonding process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] According to the method for bonding silicon / silicon low-temperature melting glass with glass frit of the present invention, the specific steps of embodiment one are as follows:

[0021] 1. Preparation of glass paste: prepare glass paste solution according to the ratio of glass powder: terpineol = 5:1; and store at 320-325°C for 15-25 minutes;

[0022] 2. Clean the silicon wafers to be bonded; first boil with No. 3 lotion solution at 95°C for 30 minutes, rinse with deionized water; then use No. 1 solution for 30 minutes at 95°C, rinse with deionized water; finally use 2 The No. liquid was boiled at 95°C for 15 minutes, rinsed with deionized water; the silicon wafer was dried in a dryer; all operations were performed in an environment with a ventilation device; the volume ratio of No. 1 liquid was Ammonia: hydrogen peroxide: water = 1:1:5 or a solution of 1:1:7, the volume ratio of No. 2 liquid is hydrochloric acid: hydrogen peroxide: water = 1:1:5 or 1:1:7 The solution,...

Embodiment 2

[0029] According to the method for bonding silicon / silicon low-temperature melting glass with glass powder of the present invention, the specific steps of embodiment two are as follows:

[0030] 1. Preparation of glass paste: prepare glass paste solution according to the ratio of glass powder: terpineol = 5:1; and store at 320-325°C for 15-25 minutes;

[0031] 2. After the glass slurry is cooled to room temperature, set the speed on the homogenizer to 3000-4000rpm / min, and apply the glass slurry for 25-30 seconds;

[0032] 3. Carry out the cleaning of silicon chip to be bonded according to the method of embodiment one;

[0033] 4. Place the silicon wafers to be bonded according to the bonding direction: place the silicon wafers to be bonded on the fixture of the bonding machine, the graphics of the device silicon wafers face down, and the surface to be bonded faces up, and coat the glass paste The coated side of the silicon wafer is downward, opposite to the surface to be bon...

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PUM

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Abstract

The invention provides a simple and easy alternative process method to solve the difficult problem of low production efficiency of bonding process in large-scale MEMS device production. The present invention uses glass powder as the medium between the silicon wafers to be bonded, and after being dissolved in a chemical solvent, it is stored at a certain temperature for a certain period of time, and then through screen printing or spin coating process, the silicon wafers to be bonded are The surface of the chip is coated with a layer of glass paste, and after manual or machine alignment, the bonding of the silicon chip to the silicon chip is completed by controlling the pressure, temperature gradient, bonding temperature and time of the silicon chip bonding. The present invention does not have high requirements on the surface finish of the silicon wafers to be bonded, and reduces the need for bonding equipment. Through the operation of the process steps, the bonding stress can be greatly reduced, and there is no silicon / glass anodic bonding that usually occurs Bonding defects such as voids that appear can increase the scribing speed and increase the device production speed in the field of MEMS processing.

Description

technical field [0001] The invention belongs to the technical field of microelectromechanical systems (MEMS) and integrated circuit (IC) packaging, and in particular relates to a method for bonding silicon / silicon low-temperature melting glass with glass powder. Background technique [0002] In the early 1980s, microelectromechanical systems (MEMS) were clearly formed as a very important technical discipline. MEMS technology is the extension and broadening of microelectronics technology. It not only has the function of signal processing, but also has the function of perception and action to the external world. The intelligent, high-functional-density new system developed on this basis will have a revolutionary impact on the production and lifestyle of human society in the 21st century, just like the role of microelectronics technology in the last century, and lay the foundation for the country to stand on the international stage. It is a strategic high technology related to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C5/00H01L21/00H01L21/77B81C99/00
Inventor 刘勐张威
Owner 北京青鸟元芯微系统科技有限责任公司
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