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High resistivity silicon carbide single crystal and mfg. method

A silicon carbide single and silicon carbide technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, single crystal growth, etc., can solve problems affecting the performance of compound devices, etc.

Inactive Publication Date: 2007-02-28
NORSTEL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Specifically, traps such as EL2 antibit deep donors or Cr deep donors present in semi-insulating GaAs substrates have been shown to affect the performance of compound devices.

Method used

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  • High resistivity silicon carbide single crystal and mfg. method
  • High resistivity silicon carbide single crystal and mfg. method
  • High resistivity silicon carbide single crystal and mfg. method

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Embodiment Construction

[0032]The presence of trap-related leakage current breakdown in SiC MESFETs and the higher micropipe densities often encountered in vanadium-doped substrates are driving the development of high-resistivity substrates with Control components that minimize the concentration of harmful traps.

[0033] These require that the crystal growth process use a pure growth environment. In high-temperature chemical vapor deposition (HTCVD) techniques, source materials are synthesized in situ from purified gaseous precursors whose composition can be controlled to minimize the introduction of undesirable impurities, or to promote specific undesirable A combination of intrinsic and intrinsic defects (described below). At the same time, the composition of the crystal needs to be controlled to provide the necessary mechanisms to maintain its resistivity at values ​​useful for microwave component applications.

[0034] The basic method for growing high-resistivity crystals, as applied to silic...

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Abstract

The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for example high frequency devices, so that the devices can exhibit stable and linear characteristics and to provide a high resistivity silicon carbide substrate having a low density of structural defects and a substantially controlled uniform radial distribution of its resistivity.

Description

technical field [0001] The present invention relates to a high-resistivity silicon carbide single crystal from which substrates for high-frequency semiconductor devices such as MESFETs can be produced. The composition of the high resistivity substrate is chosen so as to eliminate trapping effects that degrade device performance. The invention also relates to silicon carbide substrates that have a high resistivity prior to processing and are capable of maintaining high resistivity after processing steps involving heating at temperatures above 1500°C. Background technique [0002] Fabrication of SiC and III-N power microwave devices with low RF losses requires semi-insulating or high-resistivity silicon carbide (SiC) substrates. SiC devices with power densities superior to those of GaAs and silicon LDMOS technologies have been realized, however, there are many issues that need to be resolved in order to realize the full potential of SiC-based microwave technologies. For exam...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/04C30B29/36C30B25/00H01L21/205
CPCC30B25/00H01L21/0445C30B29/36
Inventor 艾利克山德尔·埃利森古彦·T.·桑卓恩·麦格纳森埃里克·简森
Owner NORSTEL
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