Method for making silicon thin film on insulating silicon based substrate with graphics
A silicon thin film and insulating silicon technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of partial silicon thin film breakage, peeling off, and the reduction of the bonding firmness between the silicon thin film and the insulating silicon substrate. Achieve uniform thickness and less damage to lattice structure
Inactive Publication Date: 2007-05-23
NO 24 RES INST OF CETC
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Problems solved by technology
[0007] The technical problem to be solved by the present invention is to invent a method for fabricating a silicon thin film on a patterned insulating silicon-based substrate, which overcomes the problem that the bond between the silicon thin film and the insulating silicon-based substrate is reduced, and local silicon thin films break and fall off. The problem is to make the lattice structure of the silicon thin film on the patterned insulating silicon-based substrate less damaged and uniform in thickness, so as to meet the requirements of making silicon-based MEMS movable parts
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[0041] Specific embodiments of the present invention are not limited to the following description. The method of the present invention will be further described below in conjunction with the accompanying drawings.
[0042] The step (see Fig. 10) of the inventive method is:
[0043] First, use the general silicon / silicon bonding, thinning, and polishing methods to make two silicon wafers into a silicon film-silicon dioxide-silicon bonding sheet with a silicon film thickness that meets the requirements;
[0044] Then, the obtained silicon film-silicon dioxide-silicon bonding sheet and the oxide layer insulating silicon-based substrate 5 with patterns are made into a silicon-silicon Silicon-silicon film-insulating silicon-based substrate bonding sheet;
[0045] Finally, the silicon-silicon dioxide layer on the surface of the silicon film layer 4 of the silicon-silicon-dioxide-silicon film-insulating silicon-based substrate bonding sheet is removed by a general chemical etching ...
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This invention relates to silicon film process method on the isolation silicon underlay with graph, which comprises the following steps: first to process the silicon film to silicon dioxide to silicon bonding slice required by two silicon slices; then to process the silicon to silicon dioxide to silicon film to isolation silicon underlay bonding slice; finally to use erosion method to remove the silicon to silicon dioxide layer on the surface of the said bonding slice surface to finish the silicon film process on the underlay.
Description
(1) Technical field [0001] The invention relates to a method for making a silicon thin film on a patterned insulating silicon base substrate. It is used in the manufacture of micro-electro-mechanical systems (MEMS) movable parts to prepare silicon films that meet the requirements on insulating silicon-based substrates with patterns. (2) Background technology [0002] At present, in the semiconductor integrated circuit manufacturing technology, there are mainly methods for fabricating silicon thin films that meet the requirements on insulating silicon-based substrates: [0003] 1. Ion implantation to form silicon thin film technology. It uses the principle of ion implantation of oxygen (SIMOX), implants oxygen ions under the surface of the silicon wafer, and forms a layer of buried oxide layer through annealing treatment, so as to obtain a layer of silicon film on the insulating silicon base. The silicon film obtained by this method has good uniformity, but the thickness is...
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IPC IPC(8): H01L21/00H01L21/02H01L21/20H01L21/84
Inventor 徐世六张正元刘玉奎杨国渝税国华
Owner NO 24 RES INST OF CETC