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Susceptor with epitaxial growth control devices and epitaxial reactor using the same

An epitaxial growth and susceptor technology, applied in the direction of crystal growth, single crystal growth, chemical reactive gas, etc., can solve the problems of ineffectiveness and deterioration.

Inactive Publication Date: 2007-06-06
LPE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] In conclusion, it has been proven that the above general idea - to extend the ribs down longer, e.g. to the lower bottom - is not effective; in fact, the lengthening of the ribs leads to an increase in the thickness of the material that grows in the area immediately adjacent to the edges and ribs, But for example in the area next to the edge and away from the rib it can lead to deterioration

Method used

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  • Susceptor with epitaxial growth control devices and epitaxial reactor using the same
  • Susceptor with epitaxial growth control devices and epitaxial reactor using the same
  • Susceptor with epitaxial growth control devices and epitaxial reactor using the same

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Embodiment Construction

[0035] 4 and 5, a susceptor 1 of an epitaxial growth susceptor according to the present invention comprises a main body 2 having a lower bottom 3, an upper top 4 and some substantially flat sides 5; adapted to receive a substrate on which epitaxial growth takes place in a predetermined area 6; the body 2 is provided with an edge side area 7 defined by a pair of adjacent sides 5; along the edge side area 7, in the upper part of the body 2 is provided There are first ribs 8, which are adapted to control the flow of reaction gas along the sides 5; furthermore, still along the edge side areas 7, but in the lower part of the body 2, there are provided second ribs 9, which are adapted to control the flow of reaction gases along the Flow of reaction gas on side 5.

[0036] Thus, the second ribs 9 are separated and suitably spaced from the first ribs 8, and are arranged in such a way as to increase the thickness of the material growing in the area immediately adjacent to the edges and...

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Abstract

A susceptor (1) for epitaxial growth reactors comprises a body (2) having a lower base (3), an upper top (4) and some substantially flat side faces (5); the side faces are adapted to receive, in predetermined areas (6), substrates on which the epitaxial growth develops; body (2) is provided with edge side regions (7) defined by couples of adjacent side faces (5); along edge side regions (7) in the upper part of body (2) there are provided first ribs (8) adapted to control the flow of reaction gases along side faces (5); along edge side regions (7) in the lower part of body (2) there are provided second ribs (9) adapted to control the flow of reaction gases along side faces (5).

Description

technical field [0001] The invention relates to a susceptor for an epitaxial growth reactor and an epitaxial reactor using the susceptor. Background technique [0002] In the field of epitaxial reactors used in the microelectronics industry, the term "susceptor" is used to indicate a heated carrier on which one or more substrates can be placed during epitaxial growth; this carrier is usually heated by its susceptance; even in the Otherwise, for example, in reactors heated by lamps, the support usually retains the name "Susceptor". The present invention is not limited by the heating method. [0003] Epitaxial growth susceptors can be divided into two categories: one is in the epitaxial growth process, the substrate is in a substantially horizontal position, and the other is in the epitaxial growth process, the substrate is in a substantially vertical position (usually a distance from a few degrees from the vertical). The present invention applies to the second type of susc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/12C23C16/458C23C16/455C23C16/44H01L21/205H01L21/683
CPCC30B25/12C23C16/4588C23C16/45589H01L21/20
Inventor 佛朗哥·普雷蒂斯里尼瓦斯·亚拉加达
Owner LPE
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