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Semiconductor camera element of contrast strong detection power

A technology of imaging elements and semiconductors, applied in semiconductor devices, electrical components, electric solid-state devices, etc., can solve the problems of inability to perceive contrast, inability to obtain contrast, etc.

Inactive Publication Date: 2003-04-09
ENG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, it can be seen that even in the dark part, the amplitude is less than 1 / 5 of the whole, and sufficient contrast cannot be obtained.
In this way, with the conventional semiconductor image sensor, even in many scenes that we encounter every day, we cannot perceive enough contrast.

Method used

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  • Semiconductor camera element of contrast strong detection power
  • Semiconductor camera element of contrast strong detection power
  • Semiconductor camera element of contrast strong detection power

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] refer to figure 1 A semiconductor imaging device 1 of the present invention includes a pixel array 2 in which a plurality of pixels PX are arranged in a matrix, a readout control circuit 3 , a reset circuit 5 and a power supply circuit 7 .

[0055] The readout control circuit 3 generates a control signal RD for controlling the generation timing of image data in the pixel array 2 . The reset circuit 5 periodically resets the state of the light receiving and detecting elements in each pixel PX. The timing of the reset operation by the reset circuit 5 is controlled by reset signals Rst0 and Rst1 from the readout control circuit 3 . The power supply circuit 7 supplies a power supply voltage Vd and a ground voltage GND to each pixel in the pixel array 2 .

[0056] Fig. 2 is a block diagram illustrating the configuration of each pixel. In Fig. 2, the pixel PX (i, j) of the i-th row and the j-th column (i and j are natural numbers) and its adjacent pixels are given as repr...

Embodiment 2

[0077] In Embodiment 2, the structure of the multiplier PU suitable for such signal amplification factor control will be described. In Embodiment 2, a MOS transistor (also referred to as "A-MOS (Adujustable β-MOS) device" below) capable of controlling the amplification factor β according to the input voltage of the control gate is used to realize automatic adjustment of each pixel. A function of the photosensitivity characteristic.

[0078] refer to Figure 5 , A-MOS devices have the same common gate GR, source SR and drain DR as common MOS transistors, in addition to having a control gate CG in the form of a certain angle to the normal gate.

[0079] Image 6 Shown is a schematic diagram of the component configuration parameters of the A-MOS device.

[0080] refer to Image 6 , The A-MOS device has the gate length Lr of the normal gate GR, the gate width Wr, and the angle θ formed between the normal gate GR and the control gate CG as the component configuration parameters. ...

Embodiment 3

[0092] The effective arrangement of the two photodiodes provided for each pixel in the third embodiment will be described below.

[0093] Figure 9 Shown is a configuration diagram of an example of a photodiode arrangement according to Embodiment 3.

[0094] refer to Figure 9 A photodiode PD0 for detecting the average light quantity in the surrounding area is constituted by a P-type silicon substrate (P-sub) 20 forming a semiconductor imaging element and a PN junction formed between the N well 21 provided on the P-type silicon substrate 20 .

[0095] Then use the P formed in the N well 21 + type area 22 and with the P + type region 22 formed within the N + The PN junction formed between the region 23 constitutes a photodiode PD1 for detecting the amount of incident light incident on the pixel. In addition, P + type region 22 and N + The impurity concentration of the P-type region 23 is higher than that of the P-type silicon substrate 20 and the N well 21 .

[0096] P ...

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Abstract

Each pixel includes first and second photodiodes that are receiving-light detecting elements. The first photodiode applies a first potential according to an amount of light entering into the corresponding pixel. An internal node is electrically coupled with an internal node in another pixel via a resistance component. Hence, the second photodiode applies a second potential according to an average amount of light on the periphery to the corresponding internal node. A pixel signal generating circuit reads out a multiplied result of the first and second potentials as a pixel signal. The pixel signal has an intensity corresponding to the amount of light in the pixel in accordance with a receiving-light sensitivity characteristic (signal amplification factor) that is automatically adjusted based on an average amount of light in a region on the periphery of the pixel.

Description

technical field [0001] The present invention relates to a semiconductor imaging element that realizes light-receiving characteristics close to human visual perception characteristics, and more particularly, to a semiconductor imaging device that can detect sufficient contrast in the entire area even if there are mixed areas with large differences in brightness in the field of view. Therefore, the technology of the present invention can be used as an imaging device with high visual perception ability used in various situations, including outdoor monitoring cameras, vehicle-mounted cameras, and the like. Background technique [0002] Solid-state imaging elements such as charge-coupled device (CCD: Charge-coupled device) and complementary metal-oxide-semiconductor (CMOS: complementary metal-oxide semiconductor) imaging elements are so-called semiconductor image sensors (hereinafter also referred to as "semiconductor imaging sensors"). Components") have been installed in video c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N25/00
CPCH04N3/155H01L27/14603H04N25/59H04N25/77H04N25/57
Inventor 有馬裕
Owner ENG CORP