Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Oscillating fixed abrasive CMP system and methods for implementing the same

A chemical machinery and grinding method technology, applied in the direction of grinding machine tools, grinding devices, machine tools suitable for grinding workpiece planes, etc., can solve the problems of reducing output, time-consuming and laborious updating of grinding pads, etc., to achieve less maintenance costs and less output. Effect

Inactive Publication Date: 2003-08-27
LAM RES CORP
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, all abrasive pads must be replaced
However, the removal of used abrasive pads and the subsequent renewing of the abrasive pads is time-consuming and labor-intensive
In addition, the milling system must be kept offline for the period required to force this replacement action, thus reducing throughput

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Oscillating fixed abrasive CMP system and methods for implementing the same
  • Oscillating fixed abrasive CMP system and methods for implementing the same
  • Oscillating fixed abrasive CMP system and methods for implementing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The following will describe an invention for a chemical mechanical polishing system that enables efficient polishing of layer surfaces of wafers. The chemical mechanical polishing system preferably achieves a polishing pad that requires less maintenance and can be repaired more effectively after it loses its polishing effect. In each preferred embodiment of the present invention, the grinding pad is a grinding pad with fixed grinding materials. And the grinding pad of this fixed grinding material is then preferably arranged as the grinding pad belt that is connected between the feeding cylinder and the recovery cylinder. This configuration is referred to herein as a spool operating configuration. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It is understood, however, that one skilled in the art may practice the present invention without some or all of these specific details...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A chemical mechanical polishing (CMP) apparatus is provided. A first roller is situated at a first point and a second roller situated at a second point, such that the first point is separate from the second point. A polishing pad strip is also included and has a first end secured to the first roller and a second end secured to the second roller in a web handling arrangement. The polishing pad strip is configured to provide a surface onto which a substrate to be polished is lowered. Preferably, the polishing pad strip is a fixed abrasive pad and is configured to receive chemicals or DI water so as to facilitate a removal of material from a surface of the substrate.

Description

technical field [0001] The present invention relates to a chemical mechanical polishing (CMP) system and techniques for improving the performance and effectiveness of CMP operations. Specifically, the present invention relates to a chemical mechanical polishing system using a polishing pad with a fixed abrasive disposed on a reel operating system. Background technique [0002] In the manufacture of semiconductor devices, CMP operations including grinding, polishing, and wafer cleaning are required. Typically, integrated circuit devices are formed from multilayer structures. At the substrate level, transistor devices with diffusion regions will be formed. In subsequent layers, however, interconnecting metallization lines are patterned and electrically connected to the transistor device, thereby defining the desired functional device. As is known, patterned conductive layers are insulated from other conductive layers by an insulating material such as silicon dioxide. As mo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24B7/20B24B21/00B24B21/04B24B37/04H01L21/304
CPCB24B21/04B24B21/004B24B37/04H01L21/304
Inventor 米格尔·A·萨尔达尼亚亚历山大·A·奥夫恰兹
Owner LAM RES CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com