Triple sampling readout of magnetic RAM having series diode

Abstract

A data storage device that includes an array of resistive memory cells. The resistive memory cells may include a magnetic tunnel junction (MTJ) and a thin-film diode. The device may include a circuit that is electrically connected to the array and that is also capable of monitoring a signal current flowing through a selected memory cell. Once the signal current has been monitored, the circuit is capable of comparing the signal current to an average reference current in order to determine which of a first resistance state and a second resistance state the selected memory cell is in. Also, a method for operating the data storage device.

Description

technical field [0001] This application is related to Fred Perner et al. (Attorney Docket No. HP 100111474, filed on the same date as this application) entitled "Equipotential Readout of Magnetic Random Access Memory (MRAM) with Series Diodes" and to US Patent Application entitled "Memory Cell Isolation" by Fred Perner et al. (Attorney Docket No. HP100111473, also filed on the same date as this application). These applications are hereby incorporated by reference in their entirety. Background technique [0002] The related art discloses non-volatile magnetic random access memory (MRRAM) cells, which are located in an array 10, as shown in FIG. 1 . The array 10 includes a plurality of word lines 20 extending along the rows of the array 10 and a plurality of bit lines 30 extending along the columns of the array 10 . The word lines 20 and the bit lines 30 overlap each other. Between word lines 20 and bit lines 30 , where they intersect, comprise MRAM memory cells 40 , each o...

AI Technical Summary

Problems solved by technology

In the absence of a tight distribution of resistance values, the data bits in the MRAM memory cell 40 may be read incorrectly

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