Triple sampling readout of magnetic RAM having series diode

A diode and memory cell technology is applied in the field of triple sampling readout of a magnetic random access memory with serial diodes, and can solve problems such as data bit error reading and the like

Inactive Publication Date: 2003-12-03
SAMSUNG ELECTRONICS CO LTD
View PDF1 Cites 51 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the absence of a tight distribution of resistance values, the data bits in the MRAM memory cell 40 may be read incorrectly

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Triple sampling readout of magnetic RAM having series diode
  • Triple sampling readout of magnetic RAM having series diode
  • Triple sampling readout of magnetic RAM having series diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] image 3 An array 165 of resistive memory cells 170 is illustrated. Array 165 includes selected wordlines 180 , selected bitlines 190 , and selected resistive memory cells 175 at intersections of selected wordlines 180 and selected bitlines 190 . Array 165 also includes a plurality of unselected word lines 200 , a plurality of unselected bit lines 210 , and a plurality of unselected resistive memory cells 170 located at intersections of word lines 180 , 200 and bit lines 190 , 210 .

[0019] image 3 Circuitry electrically connected to array 165 is also illustrated. The circuit shown includes a voltage source 220 electrically coupled to a selected word line 180 . The circuit shown also includes a sense amplifier 230 electrically coupled to the selected bit line 190 and a triple sampling (TS) counter 240 electrically coupled to the sense amplifier 230 . The three sample counter 240 may issue an output signal 250 .

[0020] Figure 4 Instructions can be used for imag...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A data storage device that includes an array of resistive memory cells. The resistive memory cells may include a magnetic tunnel junction (MTJ) and a thin-film diode. The device may include a circuit that is electrically connected to the array and that is also capable of monitoring a signal current flowing through a selected memory cell. Once the signal current has been monitored, the circuit is capable of comparing the signal current to an average reference current in order to determine which of a first resistance state and a second resistance state the selected memory cell is in. Also, a method for operating the data storage device.

Description

technical field [0001] This application is related to Fred Perner et al. (Attorney Docket No. HP 100111474, filed on the same date as this application) entitled "Equipotential Readout of Magnetic Random Access Memory (MRAM) with Series Diodes" and to US Patent Application entitled "Memory Cell Isolation" by Fred Perner et al. (Attorney Docket No. HP100111473, also filed on the same date as this application). These applications are hereby incorporated by reference in their entirety. Background technique [0002] The related art discloses non-volatile magnetic random access memory (MRRAM) cells, which are located in an array 10, as shown in FIG. 1 . The array 10 includes a plurality of word lines 20 extending along the rows of the array 10 and a plurality of bit lines 30 extending along the columns of the array 10 . The word lines 20 and the bit lines 30 overlap each other. Between word lines 20 and bit lines 30 , where they intersect, comprise MRAM memory cells 40 , each o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/15G11C11/16H01L21/8246H01L27/105H01L43/08
CPCG11C11/16G11C11/15G11C13/004G11C2013/0057G11C27/02G11C11/1673
Inventor F·A·佩尔纳L·T·特兰K·J·埃尔德雷奇
Owner SAMSUNG ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap