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Enlarging solid pick-up device and picture pick-up system using same

A solid, large-scale technology used in the field of camera systems

Inactive Publication Date: 2004-05-26
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in such an amplifying solid-state imaging device of the parallel output type, the characteristic dispersion of the output amplifier is unavoidable, so it is necessary to correct the dispersion of the gradation (step) level in the output of the amplifier.
And it's non-linear level correction

Method used

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  • Enlarging solid pick-up device and picture pick-up system using same
  • Enlarging solid pick-up device and picture pick-up system using same
  • Enlarging solid pick-up device and picture pick-up system using same

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Embodiment Construction

[0021] Embodiments of the present invention will be described below using the drawings.

[0022] figure 1 This is an example of the configuration of the amplifier solid-state imaging device according to the present invention. exist figure 1 In the imaging region 10 of the amplified solid-state imaging device 1, a plurality of pixels (PIX) 11 composed of amplified MOS image sensors called AMI (Amplified MOS Imager) are arranged in two. Dimensional ranks. For ease of illustration, the number of pixels 11 is set as 2×6 in this paper.

[0023] The amplified solid-state imaging device 1 also includes: 6 vertical signal lines 12; a vertical selection circuit 15; a line memory 20 with 6 memory cells (MC) 21; the first and second horizontal signal lines 22, 23; switch 24; level selection circuit 28; first and second output amplifiers 30a, 30b. The vertical selection circuit 15 selects pixels belonging to one horizontal row so that signal voltages of six pixels belonging to one ho...

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Abstract

An image pickup area including a plurality of pixels arranged in a two-dimensional matrix pattern, each pixel being an amplified MOS image sensor, is divided into a block A including odd-numbered columns of pixels and a block B including even-numbered columns of pixels. A horizontal signal line and an output amplifier are provided for each of the block A and the block B. Signal voltages on vertical signal lines are temporarily stored in a line memory. In the normal mode, the signal voltages of two pixels adjacent to each other in the horizontal direction are supplied from the line memory respectively to the output amplifiers. In the correction mode, a switch is closed to connect the horizontal signal lines with each other so that the signal voltage of the same pixel is supplied to the output amplifiers.

Description

technical field [0001] The present invention relates to an amplified solid-state imaging device and an imaging system using the same. Background technique [0002] A solid-state imaging device having a plurality of pixels composed of amplified MOS image sensors each called an AMI (Amplified MOS Imager) is widely known. Each pixel has a photodiode that converts incident light into charges, and a source follower transistor designed to supply a signal voltage proportional to the amount of charges generated by the conversion. [0003] According to a certain prior art, by dividing the imaging area of ​​the MOS image sensor into a plurality of blocks, and only repeatedly scanning the pixels in at least one block selected, thereby realizing a high frame rate (refer to Patent Document 1 ) [0004] [Patent Document] [0005] Announcement No. 4-277986 [0006] In camera systems such as digital cameras and digital video cameras, the requirements for high-speed continuous shooting o...

Claims

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Application Information

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IPC IPC(8): H01L27/146H04N5/335H04N5/341H04N5/369H04N5/374H04N5/3745H04N5/378
CPCH04N5/361H04N5/3658H04N25/677H04N25/63
Inventor 猪熊一行藤井俊哉
Owner PANASONIC CORP