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Focus spot monitoring in a lithographic projection apparatus

A lithographic projection and defect technology, applied in photolithography exposure devices, microlithography exposure equipment, optics, etc., can solve the problems of reducing specific exposure imaging capabilities and exposure failures

Active Publication Date: 2004-11-03
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These focus imperfections degrade the imageability of a particular exposure and may even cause the exposure to fail

Method used

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  • Focus spot monitoring in a lithographic projection apparatus
  • Focus spot monitoring in a lithographic projection apparatus
  • Focus spot monitoring in a lithographic projection apparatus

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0059] figure 1 A lithographic projection apparatus according to an embodiment of the present invention is schematically described. The unit includes:

[0060] - Radiation systems LA, Ex, IN, CO for providing radiation projection beams PB (e.g. UV or EUV radiation);

[0061] A first target table (mask table) MT provided with a mask holder for holding a mask MA (e.g. a reticle) and connected to first positioning means for precisely positioning the mask relative to the object PL ;

[0062] A second target stage (substrate or wafer stage) WTa, provided with a substrate holder for holding a substrate W (e.g., a resist-coated silicon wafer), is connected to a second target stage for precise positioning of the substrate relative to the projection system PL. positioning device connection;

[0063] A third target stage (substrate or wafer stage) WTb, provided with a substrate holder for holding a substrate W (e.g., a resist-coated silicon wafer), is connected to a third target sta...

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Abstract

A lithographic projection apparatus and method of manufacturing devices using said apparatus is presented, wherein the apparatus comprises a level sensor to measure the height of a wafer in a plurality of points. The height info is sent to a processor which is arranged to create a measured height map using input from the level sensor.According to the invention the processor is also arranged to calculate an average die topology using the measured height map in order to produce a raw height map of said surface of said substrate and to detect any focus spots on said surface of said substrate using said raw height map. By subtracting the average die topology, focus spots can be located more accurately then before.

Description

technical field [0001] The invention relates to a photolithographic projection device, comprising: [0002] a radiation system for providing a radiation projection beam; [0003] a first target stage provided with a mask holder for holding a mask; [0004] a second target stage provided with a substrate holder for holding a substrate; [0005] a projection system for imaging the irradiated portion of the mask onto the target portion of the substrate; [0006] A level sensor for measuring heights at a plurality of points on a surface of a substrate provided with at least one die, and a processor configured to generate a map of the measured heights using signals input from the level sensor. Background technique [0007] For simplicity, the projection system is hereinafter referred to as a "lens"; however, the term should be broadly interpreted to encompass various types of projection systems including, for example, refractive optics, reflective optics, catadioptric systems,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/207G03F7/20G03F9/00H01L21/027
CPCG03F9/7034G03F7/70508G02C11/04
Inventor T·范里希T·J·M·卡斯坦米勒W·H·G·A·科恩恩A·范宗M·布罗尔斯
Owner ASML NETHERLANDS BV