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Micro-machined ultrasonic transducer (MUT) substrate that limits the lateral propagation of acoustic energy

A technology of ultrasonic transducer and lateral transmission, applied in the field of ultrasonic transducer

Inactive Publication Date: 2004-12-01
KONINK PHILIPS ELECTRONICS NV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Disadvantageously, the substrate material on which the MUT elements are formed has a tendency to couple acoustic energy from one MUT element to another

Method used

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  • Micro-machined ultrasonic transducer (MUT) substrate that limits the lateral propagation of acoustic energy
  • Micro-machined ultrasonic transducer (MUT) substrate that limits the lateral propagation of acoustic energy
  • Micro-machined ultrasonic transducer (MUT) substrate that limits the lateral propagation of acoustic energy

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Experimental program
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Embodiment Construction

[0013] The invention described below is applicable to micromachined ultrasonic transducer (MUT) elements attached to a substrate on which an integrated circuit (IC) is formed.

[0014] figure 1 is a simplified cross-sectional schematic diagram of an ultrasound transducer 100 including MUT elements. The ultrasonic transducer 100 includes a MUT element 110 formed on a surface of a MUT substrate 120 . Preferably, the MUT substrate 120 is silicon, but it may be replaced by any other suitable material on which the MUT elements are formed. To form the MUT element 110, a conductive layer 116 is formed on the surface of the MUT substrate as shown. Conductive layer 116 may be constructed using, for example, aluminum, gold, or doped silicon. A flexible film 118 is deposited over the MUT substrate 120 and conductive layer 116 to form a gap 114 as shown. The flexible film 118 can be made of silicon nitride (Si 3 N 4 ) or silicon dioxide (SiO 2 ) to construct. The gap 114 is formed...

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Abstract

A micro-machined ultrasonic transducer (MUT) substrate that reduces or eliminates the lateral propagation of acoustic energy includes holes, commonly referred to as vias, formed in the substrate and proximate to a MUT element. The vias in the MUT substrate reduce or eliminate the propagation of acoustic energy traveling laterally in the MUT substrate. The vias can be doped to provide an electrical connection between the MUT element and circuitry present on the surface of an integrated circuit substrate over which the MUT substrate is attached.

Description

technical field [0001] The present invention relates generally to an ultrasonic transducer and, more particularly, to a micromachined ultrasonic transducer (MUT) substrate for limiting lateral propagation of acoustic energy. Background technique [0002] Ultrasound transducers have been in use for quite some time and are very effective for non-invasive medical diagnostic imaging. Ultrasonic transducers are generally formed from piezoelectric elements or micromachined ultrasonic transducer (MUT) elements. The piezoelectric element is typically made of a piezoelectric ceramic such as lead zirconate titanate (abbreviated as PZT), and a plurality of elements are arranged to form a transducer. The MUT is formed using known semiconductor fabrication techniques to obtain a capacitive ultrasound transducer unit which generally comprises a flexible membrane supported on a silicon substrate around its edges by insulating material. The membrane is supported by the substrate and forms...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B1/00A61B8/00B06B1/02B81C1/00G10K11/00H04R19/00
CPCG10K11/002B06B1/0292
Inventor D·G·米勒
Owner KONINK PHILIPS ELECTRONICS NV