Active area bonding compatible high current structures
A current, bonding pad technology, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as circuit function failure, aluminum layer corrosion, oxide layer cracks, etc.
Inactive Publication Date: 2005-07-27
INTERSIL INC
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[0018] In the following detailed description of the preferred embodiments, reference is made to the accompanying drawings which form a part of the Examples and in which are shown by way of illustration specific preferred embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, and to understand that other embodiments may be utilized and that logical, mechanical, and electrical changes may be made without departing from the spirit and scope of the invention. Therefore, the following detailed description is not in a limiting sense, and the scope of the present invention is defined only by the claims and their equivalents.
[0019] In the following description, the term substrate is used generally to refer to any structure on which integrated circuits are formed, and to such structures during the various stages of integrated circuit fabrication. The term includes doped a...
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Abstract
An integrated circuit with circuits under a bond pad. In one embodiment, the integrated circuit comprises a substrate, a top conductive layer, one or more intermediate conductive layers, layers of insulating material and devices. The top conductive layer has a at least one bonding pad and a sub-layer of relatively stiff material. The one or more intermediate conductive layers are formed between the top conductive layer and the substrate. The layers of insulating material separate the conductive layers. Moreover, one layer of the layers of insulating material is relatively hard and is located between the top conductive layer and an intermediate conductive layer closest to the top conductive layer. The devices are formed in the integrated circuit. In addition, at least the intermediate conductive layer closest to the top conductive layer is adapted for functional interconnections of select devices under the bond pad.
Description
[0001] This application claims under 35 U.S.C § 119(e) U.S. Provisional Application Serial No. 60 / 496,881 filed August 21, 2003 and U.S. Provisional Application Serial No. 60 filed September 30, 2003 / 507,539 (attorney docket No's 125.090USPR and 125.090USP2, respectively), which are hereby incorporated by reference. technical field [0002] The present invention relates to the construction of semiconductor devices, and more particularly, to the formation of active circuitry under bond pads. Background technique [0003] An integrated circuit includes two or more electronic devices formed in or on a substrate of semiconductor material. Typically, an integrated circuit includes two or more metal layers for forming select devices and interconnects between the devices. The metal layers also provide electrical paths for the input and output connections of the integrated circuit. The input and output connections of the integrated circuit are made through bond pads. Bond pads a...
Claims
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Login to View More IPC IPC(8): H01L23/485
CPCH01L2924/0105H01L2924/01082H01L2924/00014H01L24/05H01L2224/05624H01L2924/01327H01L2924/01029H01L2924/01022H01L2224/05001H01L2224/02166H01L2924/01013H01L23/53295H01L24/48H01L2224/05082H01L24/03H01L24/45H01L23/528H01L2924/01047H01L2924/05042H01L2924/04941H01L2224/85399H01L2924/01079H01L2224/48463H01L2224/05166H01L2224/45099H01L2224/04042H01L2924/14H01L2224/05647H01L2924/01033H01L2924/01006H01L2924/01074H01L2924/01014H01L2924/01007H01L21/768H01L23/485
Inventor 约翰·T.·加斯纳迈克尔·D.·丘奇萨米尔·D.·帕拉博小保罗·E.·贝克曼戴维·A.·德克罗斯塔罗伯特·L.·罗曼尼科克里斯·A.·迈克卡迪
Owner INTERSIL INC