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Method for manufacturing microelectronic circuit component and integrated circuit component

A technology of microelectronic components and integrated circuits, applied in the direction of electrical components, circuits, electric solid devices, etc.

Active Publication Date: 2005-11-30
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the fabrication of memory devices and other storage devices often faces various problems, such as differences in surface topography between the memory device and the supporting microelectronic devices, which can be related to over-etching, over-planarization and / or other factors that cause damage to some components, but at the same time other components are not damaged

Method used

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  • Method for manufacturing microelectronic circuit component and integrated circuit component
  • Method for manufacturing microelectronic circuit component and integrated circuit component
  • Method for manufacturing microelectronic circuit component and integrated circuit component

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Embodiment Construction

[0036] In order to make the above-mentioned and other objects, features and advantages of the present invention more obvious and understandable, the preferred embodiments are specially cited below, and in conjunction with the accompanying drawings, the detailed description is as follows:

[0037] see figure 1 , this figure is a cross-sectional view of a split gate field effect transistor (split gate field effect transistor, referred to as SGFET) element 100 in the manufacturing process disclosed by the present invention. can be one of multiple SGFETs or arrays of SGFET cells, however, for clarity and simplicity, figure 1 A single device 100 is shown. Furthermore, although the present disclosure describes SGFET devices, those skilled in the art will appreciate that the present disclosure is also applicable to other semiconductor devices, such as stacked gate technology and other transistor technologies in flash memory.

[0038] The device 100 includes a substrate 110 having ...

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Abstract

A method of manufacturing a semiconductor device, wherein a gate structure is formed over a substrate, an interconnect layer is formed over the gate structure and the substrate, and a cap layer is formed over the interconnect layer. The interconnect layer and the cap layer are then planarized to form a substantially planar surface. A mask layer, such as an oxide mask layer, is formed over the planarized portions of the interconnect layer, and the planarized cap layer and portions of the interconnect layer are removed by etching around the mask layer.

Description

technical field [0001] The present invention relates to a method for manufacturing and forming an integrated circuit, and in particular to a method for manufacturing and forming a polysilicon layer of an integrated circuit. Background technique [0002] Due to many new applications requiring high-density storage elements, the demand for storage elements with small package size and high storage density is increasing, and the geometric size of semiconductor elements continues to shrink greatly, of which the general There is a range of components having feature geometries smaller than 65nm. [0003] However, the fabrication of memory devices and other storage devices often faces various problems, such as differences in surface topography between the memory device and the supporting microelectronic devices, which can be related to over-etching, over-planarization and And / or other factors that cause damage to some components, but at the same time other components are not damaged...

Claims

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Application Information

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IPC IPC(8): H01L21/82H01L21/8247H01L23/485H01L27/115H01L27/12H01L29/76
CPCH01L2924/0002H01L27/11521H01L23/485H01L27/115H01L27/1203H10B69/00H10B41/30H01L2924/00
Inventor 陈汉平喻中一
Owner TAIWAN SEMICON MFG CO LTD