Didital controlled high precision high stability APD offset voltage circuit

An APD bias and voltage circuit technology, which is applied in the direction of adjusting electric variables, control/regulation systems, instruments, etc., can solve the problems of increased error count rate of detectors, poor detector performance, and decreased detector performance.

Inactive Publication Date: 2006-06-28
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In quantum secure communication, single-photon detection technology is one of the key technologies. When a single-photon detector detects a single-photon signal, it is necessary to provide a normal working bias voltage for the avalanche photodiode. The size of the bias voltage will affect the avalanche photodiode. The amount of noise when detecting and amplifying single-photon signals. The greater the noise, the greater the miscounting, and the worse the performance of the detector. At the same time, the bias voltage is only when the avalanche photodiode can normally detect and amplify the avalanche signal triggered by single-photon. When it is above the critical value, the larger the bias voltage is, the more non-single-photon avalanche signals will be triggered. These false single-photon avalanche signals will also increase the miscount rate of the detector, thereby degrading the performance of the detector. The first effect of these two effects can be improved by increasing the accuracy of the bias voltage, and the second effect can be resolved by increasing the accuracy of the bias voltage; in addition, the stability of the bias voltage will affect the detection and amplification of the avalanche photodiode The size of the noise in the single-photon signal has also become a limiting factor for improving the detector
However, adjusting the bias voltage in an analog way is easy to introduce bias voltage errors caused by human factors, and it is not easy to digitally integrate in single photon detectors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Didital controlled high precision high stability APD offset voltage circuit
  • Didital controlled high precision high stability APD offset voltage circuit
  • Didital controlled high precision high stability APD offset voltage circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The present invention is specifically described below in conjunction with accompanying drawing:

[0019] Such as figure 1 As shown, the numerically controlled high-precision and high-stability APD bias voltage circuit of the present invention is composed of a two-stage voltage stabilizing circuit, a primary voltage stabilizing unit 1 and a secondary voltage stabilizing unit 2, and the primary voltage stabilizing unit 1 is a rectifying voltage stabilizing circuit. The rectifying and stabilizing circuit is a general-purpose stabilizing and rectifying circuit, and the secondary stabilizing unit 2 is a series stabilizing circuit, which is composed of an adjusting unit, a sampling unit, a numerical control unit, a comparing unit and an amplifying unit.

[0020] The principle of the primary voltage stabilizing unit 1 is as follows: figure 2 As shown, the 220-volt AC power is stepped down by the transformer 11 to provide the required AC power to the rectifier bridge 12. The ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An APD offset voltage circuit of digital controlled high accurate and high stable type consists of primary voltage stabilized unit being connected with the secondary one to each other and being a rectification voltage stabilized circuit, the secondary voltage stabilized unit being series voltage stabilized circuit formed by regulation unit, sampling unit, digital controlled unit, comparison unit and amplification unit.

Description

technical field [0001] The invention relates to quantum cryptography communication, in particular to a digitally controlled high-precision and high-stability APD bias voltage circuit required for APD (avalanche photodiode) work in single-photon detection technology. Background technique [0002] Quantum cryptography communication technology is to load the password information on single photon, and the single photon is transmitted in the optical fiber to realize the transmission of password information. Any user who eavesdrops on the single photon information will change the original state of the single photon when the single photon is obtained, so that the The other party of the communication will find that the information has been tapped, and the information will become invalid. In quantum secure communication, single-photon detection technology is one of the key technologies. When a single-photon detector detects a single-photon signal, it is necessary to provide a normal ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/46G05F1/56G05F1/563
Inventor 孙志斌杨捍东马海强翟光杰吴令安
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products