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Distributed feedback semiconductor laser and method for manufacturing the same

A distributed feedback, semiconductor technology, applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of disappearing gain difference, unable to block current, etc.

Inactive Publication Date: 2006-07-05
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In general, DFB lasers have the problem that the diffraction grating on the light-emitting surface is arbitrarily cut off, and the oscillation of a single wave is limited within 30%
Therefore, if a strong bias is applied, current may not be blocked and the overall gain difference may disappear

Method used

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  • Distributed feedback semiconductor laser and method for manufacturing the same
  • Distributed feedback semiconductor laser and method for manufacturing the same
  • Distributed feedback semiconductor laser and method for manufacturing the same

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Embodiment Construction

[0021] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the same reference numerals are used for the same elements even in different drawings. For the purpose of clarity and conciseness, detailed descriptions of known functions and configurations incorporated herein are omitted to avoid obscuring the subject matter of the present invention.

[0022] figure 1 is a perspective view showing the distributed feedback semiconductor laser 100 according to the first embodiment of the present invention.

[0023] The distributed feedback semiconductor laser 100 includes a substrate 101 , an active layer 102 formed on the substrate 101 , and a cover layer 103 formed on the active layer 102 , and the conductivity type of the cover layer 103 is different from that of the substrate 101 . The laser 100 also includes diffraction gratings 104 periodically formed in the cover layer 103 and separated from each other by a predetermine...

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Abstract

A distributed feedback semiconductor laser oscillating in a single mode and a method for manufacturing the same is disclosed. The distributed feedback semiconductor laser includes an active layer; a clad layer formed adjacent to the active layer; and diffraction gratings periodically formed in the clad layer and separated from each other by a predetermined distance. The diffraction gratings are formed of a nonconductor so that a current injected into the active layer is partially blocked and distribution of gain coefficient is varied. The nonconductor is an oxidized semiconductor material.

Description

technical field [0001] The present invention relates to a distributed feedback semiconductor laser, more particularly to a distributed feedback semiconductor laser oscillating in a single mode and a manufacturing method thereof. Background technique [0002] Distributed feedback (DB) semiconductor lasers are used as light sources for optical communications. A distributed feedback semiconductor laser includes a diffraction grating disposed on an active layer that generates lasing light. Due to wave selectivity, it works in a single-mode state. Distributed feedback semiconductor lasers are widely used in the field of long-distance high-speed communication. [0003] According to a conventional method of realizing a distributed feedback semiconductor laser, gain can be obtained periodically or a difference in refractive index can be detected periodically by using a diffraction grating at the resonance length of the laser. Devices fabricated according to these methods are refe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/00
CPCH01S5/1228H01S5/2275H01S5/34366
Inventor 金映铉李重基金仁朴晟秀
Owner SAMSUNG ELECTRONICS CO LTD