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Semiconductor memory device

A storage device, semiconductor technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as current consumption

Inactive Publication Date: 2007-04-04
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, when the 4-bit or 8-bit data output operation mode is performed, the upper and lower partial input / output lines 101 and 102 connected to the 16-cell block are all unnecessarily precharged, thereby causing current consumption

Method used

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  • Semiconductor memory device
  • Semiconductor memory device

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Experimental program
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Embodiment Construction

[0018] Semiconductor memory devices according to various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0019] 2 illustrates a block diagram of a local input / output line precharge unit and a precharge control signal generator for the local input / output line precharge unit according to one embodiment of the present invention.

[0020] On one side coupled to the upper and lower local input / output lines 205 and 207 of cell blocks, local input / output line precharge cells LIOPCG1-LIOPCG8 are prepared, each of the cell blocks including a predetermined number of unit cells to The planned data output operation mode of the semiconductor memory device is satisfied. Also, the cell blocks are divided into a set of upper cell blocks Up Half and a set of lower cell blocks Down Half.

[0021] The upper and lower unit blocks Up Half and Down Half are arranged symmetrically. The upper cell block Up Half is coupled with the uppe...

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PUM

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Abstract

A semiconductor memory device includes: a bank including a plurality of cell blocks; a first group of local input / output lines to transfer data stored on a first group of the cell blocks according to a first data output mode; a second group of local input / output lines to transfer data stored on a second group of the cell blocks according to the first data output mode and a second data output mode; a first precharge unit precharging the first group of the local input / output lines; a second precharge unit precharging the second group of the local input / output lines; a precharge signal generator to precharge the first and second groups of the cell blocks for the first data output mode and the second group of the cell blocks for the second data output mode.

Description

technical field [0001] The present invention relates to a semiconductor memory device, and more particularly, to a precharge circuit for local input / output lines in the semiconductor memory device. Background technique [0002] Typically, a semiconductor memory device having a stacked memory bank structure includes a plurality of memory banks, each of which is configured with a set of memory cell arrays each including a plurality of memory cells. The memory blocks are arranged in the word line direction, and the memory cell arrays are also arranged in the word line direction, and are connected to local input / output lines. The local input / output lines are used as data transmission lines by connecting to the global input / output lines. The number of local input / output lines is prepared as many as the divided memory blocks, and a precharge circuit is connected to precharge each local input / output line. [0003] FIG. 1 illustrates a block diagram for describing a part of a memo...

Claims

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Application Information

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IPC IPC(8): G11C11/4072G11C11/413G11C11/4193
CPCG11C5/063G11C7/1048G11C2207/2227
Inventor 河成周赵浩烨
Owner SK HYNIX INC
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