Method of manufacturing semiconductor device
a manufacturing method and semiconductor technology, applied in semiconductor devices, diodes, electrical devices, etc., can solve the problems of inability to suppress the reduction of the degree of impurity activation, the inability of conductive silicon film having a prescribed pattern having a desired resistance value, and the inability to achieve sufficient drive capability of conventional buried-channel type transistors. to achieve the effect of increasing the penetration margin
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first embodiment
[0037] Referring to FIGS. 1 to 4, the method of manufacturing a semiconductor device in accordance with a first embodiment will be described.
[0038] In the method of manufacturing a semiconductor device in the present embodiment, as shown in FIG. 1, an N well region 1 and an element isolation region (element isolation insulation film) 2 are first formed in a semiconductor substrate. A polysilicon film is then formed to cover element isolation region 2 and the element formation region. The polysilicon film is then etched into a prescribed pattern, so that polysilicon film 3 having a prescribed pattern to be a gate electrode and a resistance element is formed. Thereafter, in order to form a P− type impurity diffusion region 4 to form an LDD structure, boron is diagonally implanted into the element formation region, resulting in the structure shown in FIG. 1.
[0039] A sidewall insulating film 5 made of a TEOS oxide film or the like is formed on the side wall of polysilicon film 3 havin...
second embodiment
[0049] The method of manufacturing a semiconductor device in accordance with a second embodiment will now be described with reference to FIG. 5.
[0050] In the method of manufacturing a semiconductor device in accordance with the present embodiment, similar to the first embodiment, oxide film 7 is first formed to coat impurity diffusion region 4, impurity diffusion region 6 and the preliminary polysilicon to form gate electrode 3a and resistance element 3b, using CVD at a relatively low temperature of not more than 700° C., as shown in FIG. 5. Then, an oxide film 8 is formed only on the upper side of the preliminary polysilicon film to be gate electrode 3a and resistance element 3b in a prescribed region while only oxide film 7 is formed on the upper side of the polysilicon film to be gate electrode 3a and resistance element 3b in the other region.
[0051] Thereafter, a thermal process is performed to activate the respective impurities in impurity diffusion region 4, impurity diffusio...
third embodiment
[0058] The method of manufacturing a semiconductor device in accordance with a third embodiment will be described with reference to FIG. 6.
[0059] In the method of manufacturing a semiconductor device in accordance with the present embodiment, as described in the first embodiment with reference to FIG. 3, oxide film 7 is first formed to coat impurity diffusion region 4, impurity diffusion region 6 and the preliminary polysilicon film to be gate electrode 3a and resistance element 3b, using CVD at a relatively low temperature of not more than 700° C. Thereafter, as shown in FIG. 6, oxide film 7 is left in a prescribed region while oxide film 7 in the other region is removed by photolithography and etching.
[0060] Thereafter, while impurity diffusion region 4, impurity diffusion region 6, gate electrode 3a and resistance element 3b are covered with oxide film 7 in a prescribed region and impurity diffusion region 4, impurity diffusion region 6 and the polysilicon film to be gate elect...
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