Method and managing bad memory blocks in a nonvolatile memory device, and nonvolatile-memory device implementing the management method

a nonvolatile memory and management method technology, applied in information storage, static storage, digital storage, etc., can solve the problem of reducing the amount of memory actually available to users, and achieve the effect of reducing the occupation of memory

Inactive Publication Date: 2006-01-26
MICRON TECH INC
View PDF3 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0014] One aim of the present invention is to provide a method for managing bad memory blocks in

Problems solved by technology

Generally, however, the re-directing table involves a rather high occupation of memory, so that its s

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and managing bad memory blocks in a nonvolatile memory device, and nonvolatile-memory device implementing the management method
  • Method and managing bad memory blocks in a nonvolatile memory device, and nonvolatile-memory device implementing the management method
  • Method and managing bad memory blocks in a nonvolatile memory device, and nonvolatile-memory device implementing the management method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022]FIG. 1 shows a flowchart of the re-mapping of bad memory blocks according to the present invention. To facilitate understanding of the present invention, the following description refers also to the example illustrated in FIG. 2, which is a schematic illustration of the memory blocks of a nonvolatile-memory device and the respective addresses, as well as a re-directing vector according to the present invention. In FIG. 2, moreover, the non-bad memory blocks are designated by a white background, whilst the bad memory blocks are designated by a dotted background.

[0023] As illustrated in FIG. 1, initially the available memory blocks are logically divided into two sets, one formed by memory blocks reserved to users, which, for simplicity, are referred hereinafter to as addressable memory blocks, and the other formed by memory blocks reserved to the replacement of bad addressable memory blocks, which are designated hereinafter, for simplicity, as “spare memory blocks” (block 100)....

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A method for managing bad memory blocks of a nonvolatile-memory device, in which the available memory blocks are divided into a first set, formed by addressable memory blocks that are to be used by a user, and a second set, formed by spare memory blocks that are to replace bad addressable memory blocks, and in which the bad addressable memory blocks are re-mapped into corresponding spare memory blocks. The re-mapping of the bad addressable memory blocks envisages: seeking bad spare memory blocks; storing the logic address of each bad spare memory block in a re-directing vector in a position corresponding to that of the bad spare memory block in the respective set; seeking bad addressable memory blocks; and storing the logic address of each bad addressable memory block in a free position in the re-directing vector.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a method for managing bad memory blocks in a nonvolatile-memory device, and to a nonvolatile-memory device implementing the management method. [0003] 2. Discussion of Related Art [0004] As is known, nonvolatile-memory devices having an architecture of a NAND type have a memory array divided into memory blocks, each of which is in turn divided into sub-blocks referred to as pages. Each page is formed by a given number of bytes, the majority of which, approximately 95%, define the so-called data area, while the remaining bytes define an area reserved to the storage of given information (“page spare area”). [0005] Nonvolatile-memory devices having an architecture of a NAND type can be divided into two major categories according to the number of bad memory blocks that they contain: the first category comprises so-called good nonvolatile-memory devices, which do not contain bad memory blo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G11C29/00
CPCG11C29/76
Inventor IACULO, MASSIMOGUIDA, NICOLARUGGIERO, ANDREA
Owner MICRON TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap