Apparatus for manufacturing a semiconductor device and method of forming the same

Abstract

An apparatus for manufacturing a semiconductor includes a polyhedral transfer chamber, a first process module for forming a gate dielectric layer by ALD, and a second process module for thermally treating the gate dielectric layer. The first process module is in communication with a first side of the transfer chamber. The second process module in communication with a second side of the transfer chamber. The apparatus further includes at least one load-lock chamber in communication with a third side of the transfer chamber.

Description

CROSS REFERENCE TO RELATED APPLICATION [0001] This application is a Divisional of U.S. patent application Ser. No. 10 / 835,372, filed on Apr. 28, 2004, now pending, which claims priority under 35 USC § 119 to Korean Patent Application No. 2003-27176, filed on Apr. 29, 2003, the contents of which are herein incorporated by reference in their entirety for all purposes. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to an apparatus for manufacturing a semiconductor device. It also relates to a method of forming the same. More particularly, the present invention relates to an apparatus for manufacturing a semiconductor device and to a method of manufacturing the same. [0004] 2. Description of the Related Art [0005] As memory devices such as a computer has been widely used, a semiconductor device used for the memory device has been developed. From a functional point of view, it is required that a semiconductor device operates at a rapid s...

AI Technical Summary

Benefits of technology

The patent describes an apparatus and method for manufacturing a semiconductor device with a gate electrode. The apparatus includes a polyhedral transfer chamber with two process modules for forming a gate dielectric layer and thermally treating it. The method involves loading a substrate into the apparatus, forming a gate dielectric layer using ALD, and then thermally treating the substrate to densify the gate dielectric layer. The substrate is then returned to the chamber for forming a first gate electrode on the thermally treated gate oxide layer. The technical effects of this invention include improved quality and reliability of semiconductor devices with a gate electrode.

Problems solved by technology

When the substrate is, however, transported to the reacting furnace, vacuum may not be provided to the substrate.

As a result, it may be impossible to form a gate oxide layer having a thickness of below about 15 Å due to the native oxide layer.

Since the batch type high-pressure and heat-treatment chamber is employed in the cluster tool, a native oxide layer grows on a gate oxide layer formed on the substrate to a thickness of above about 10 Å. A gate electrode formed on the gate oxide layer having a thicker thickness may deteriorate the reliability of a semiconductor.

It may be difficult to form a gate oxide layer having a thickness of below about 15 Å using the conventional cluster tool.

The gate oxide layer may not have a desired thickness owing to the native oxide layer.

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