Surface acoustic wave device, electronic apparatus, and sensor apparatus

Abstract

A SAW device includes an IDT which is provided on the principal surface of a quartz crystal substrate having Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, |ψ|90°×n (where n=0, 1, 2, 3)) and excites a Rayleigh wave (wavelength: λ) in a stopband upper end mode. Inter-electrode-finger grooves are recessed between electrode fingers of the IDT. An IDT line occupancy η and an inter-electrode-finger groove depth G satisfy a predetermined relationship in terms of the wavelength λ, such that the SAW device has a frequency-temperature characteristic of a cubic curve having an inflection point between a maximum value and a minimum value in an operation temperature range. The inflection point is adjustable to a desired temperature or a desired temperature range depending on the IDT line occupancy η within an operation temperature range.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation of U.S. patent application Ser. No. 13 / 223,405 filed on Sep. 1, 2011. This application claims the benefit of Japanese Patent Application No. 2010-201751 filed Sep. 9, 2010. The disclosures of the above applications are incorporated herein by reference.TECHNICAL FIELD[0002]The present invention relates to a surface acoustic wave device, such as a resonator or an oscillator using a surface acoustic wave (SAW), and an electronic apparatus and a sensor apparatus including the same.RELATED ART[0003]SAW devices are widely used in electronic apparatuses, such as a mobile phone, a hard disk, a personal computer, a receiver tuner of BS and CS broadcasts, an apparatus which processes a high-frequency signal or an optical signal propagating through a coaxial cable or an optical cable, a server network apparatus which requires a high-frequency and high-precision clock (low jitter and low phase noise) in a wide tempe...

AI Technical Summary

Benefits of technology

[0026]In the SAW resonator of this embodiment, the depth G of the inter-electrode-finger grooves may satisfy the relationship 0.01λ≦G≦0.0695λ. If the depth G of the inter-electrode-finger grooves is set within this range, it is possible to suppress a frequency fluctuation in an operation temperature range (for example, −40° C. to +85° C.) to be very small, and even when a manufacturing variation occurs in the depth of the inter-electrode-finger grooves, it is possible to suppress the shift amount of a resonance frequency between individual SAW resonators within a correctable range.

[0083]The SAW device may further include an oscillation circuit which drives the IDT. Therefore, it is possible to obtain a SAW oscillator having a very small frequency fluctuation in a wide operation temperature range, a low CI value, and excellent oscillation stability.

Problems solved by technology

Thus, the reflection efficiency of the SAW by the reflector is unsatisfactory compared to an ST cut quartz crystal SAW device in which a SAW propagates along the substrate surface, making it difficult to realize reduction in size and a high Q value.

As a result, if a variation occurs in the frequency fluctuation with a change in the temperature of the SAW device, product reliability and quality are damaged.

When the frequency-temperature characteristic of the SAW device is a quadratic curve in the operation temperature range, it is difficult to realize minimization of a frequency fluctuation range or an inflection point.

If the electrode thickness of the IDT simply increases, there is a problem in that deterioration in frequency stability or the like occurs due to stress migration at the time of electrical conduction or side etching at the time of IDT formation.

However, in all the SAW devices, excluding the SAW device described in JP-B-1-34411 which excites a leaky SAW, the frequency-temperature characteristic in the operation temperature range is expressed by a quadratic curve, it is not difficult to sufficiently reduce a frequency fluctuation range or to realize an inflection point.

For this reason, it may be impossible to sufficiently cope with recent requirements for a SAW device, such as expansion or high-precision performance of an operation temperature range, long-term operation stability in an environment in which temperature undergoes severe changes, and the like.

At the time of the mass production of SAW devices, in general, the electrode fingers of the IDT are formed by photoetching an electrode film, but it is postulated that the line width L has normally a manufacturing error of about 0.5%.

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