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Memory cell programming method, memory control circuit unit and memory storage apparatus

a memory cell and programming method technology, applied in the direction of digital storage, input/output to record carriers, instruments, etc., can solve the problems of data being read erroneously, error bits being generated, data may not be correctly identified, etc., to prevent read-disturb and prolong the lifetime of memory cells

Active Publication Date: 2016-06-16
PHISON ELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010]The present invention provides a memory cell programming method, a memory control circuit unit, and a memory storage device capable of lengthening a lifetime of memory cells and preventing read-disturb.

Problems solved by technology

Thus, after the programming procedure is performed for multiple times, the storage state of the memory cell may not be correctly identified, and an error bit is thus generated.
In addition, when the data stored in the same memory cell are read for multiple times, such as hundreds of thousands or even millions of times, it is very likely that the data are read erroneously.

Method used

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  • Memory cell programming method, memory control circuit unit and memory storage apparatus
  • Memory cell programming method, memory control circuit unit and memory storage apparatus
  • Memory cell programming method, memory control circuit unit and memory storage apparatus

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Embodiment Construction

[0035]Reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.

[0036]Embodiments of the present invention may comprise any one or more of the novel features described herein, including in the Detailed Description, and / or shown in the drawings. As used herein, “at least one,”“one or more,” and “and / or” are open-ended expressions that are both conjunctive and disjunctive in operation. For example, each of the expressions “at least one of A, B and C,”“at least one of A, B, or C,”“one or more of A, B, and C,”“one or more of A, B, or C,” and “A, B, and / or C” means A alone, B alone, C alone, A and B together, A and C together, B and C together, or A, B and C together.

[0037]It is to be noted that the term “a” or “an” entity refers to one or more of that entity. As such...

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PUM

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Abstract

A memory cell programming method for a rewritable non-volatile memory module is provided. The method includes grouping physical erasing units of the rewritable non-volatile memory module at least into a first area and a second area, wherein a first programming parameter set is configured initially for writing a first kind of data into the physical erasing units of the first area and the upper physical programming units of the physical erasing units of the first area are not written with data. The method also includes adjusting the first set of programming parameters to obtain a second programming parameter set, and applying the second set of programming parameters to write a second kind of data into the physical erasing units of the second area, wherein the upper physical programming units of the physical erasing units of the second area are not written with data.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the priority benefit of Taiwan application serial no. 103143496, filed on Dec. 12, 2014. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.BACKGROUND[0002]1. Technical Field[0003]The present invention relates to a memory cell programming method, and particularly relates to a memory cell programming method for a rewritable non-volatile memory module, and a memory control circuit unit and a memory storage device using the same.[0004]2. Description of Related Art[0005]The growth of digital cameras, mobile phones, and MP3 players has been rapid in recent years. Consequently, the consumers' demand for storage media has increased tremendously. Since rewritable non-volatile memory has the advantages of being non-volatile, saving power, having a smaller volume, no mechanical structure, and quick reading / writing speed, the rewritable non-vo...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G06F3/06
CPCG06F3/0604G06F3/064G06F3/0679G06F3/0652G06F3/0659G06F12/0246G11C8/12G11C11/5628G11C16/08G11C16/10G11C16/16G11C16/3495G06F2212/1024G06F2212/1032G06F2212/7201G06F2212/7203
Inventor LIN, WEIHSU, YU-CHENG
Owner PHISON ELECTRONICS
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