Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Apparatus and method

a substrate surface and apparatus technology, applied in the direction of chemical vapor deposition coating, metal material coating process, coating, etc., can solve the problems of limiting the use of ald method in many applications, not being able to process pieces, and using ald method according, so as to reduce the amount of waste produced, reduce the amount of waste, and the effect of efficient starting materials

Inactive Publication Date: 2017-12-21
BENEQ OY
View PDF61 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention allows for processing large pieces with the ALD method, which was previously limited to smaller dimensions. This is possible because the invention allows for local processing of large surfaces, unlike previous ALD reactors. Additionally, the invention does not require vacuum, which could damage thin-walled pieces, and minimizes waste by using efficient starting materials and flushing agents.

Problems solved by technology

One problem in the arrangement according to above described prior art technique is that with ALD reactors it is not possible to process pieces which are so large that they do not fit inside an ALD reactor.
This limits considerably the use of the ALD method in many applications.
Another problem is that the ALD method is used according to a known technique with vacuum.
However, wall thickness of such containers is often not sufficient, and the container may not withstand the necessary vacuum and the container may collapse.
Moreover feeding of starting materials successively into large chambers may be difficult and time consuming, since filling and emptying of large chamber is slow.
Moreover all the surfaces of the substrate placed in the chamber will be exposed to surface reactions, whereupon it is not possible to expose only part of the surface of the substrate to surface reactions without mounting on the surface of the substrate masks which cover part of the surface of the substrate.
However placing of such masks is often slow and complicated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus and method
  • Apparatus and method
  • Apparatus and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015]Referring to FIG. 1 a first embodiment of the apparatus of the present invention is shown. According to FIG. 1 the apparatus comprises a source 6, which may be positioned on the surface 4 of the substrate 2 to be processed. The source 6 comprises a nozzle surface, which is placed against the surface 4 of the substrate 2 to be processed or on the surface 4 within a distance from the surface 4 so that the nozzle surface will cover part of the surface 4 of the substrate 2. Thus, the nozzle surface means in this context the surface of the source 6, which is placed against the surface 4 of the substrate 2 or on the surface 4. By means of the source a first starting material A is conducted via nozzle surface on the surface 4 of the substrate 2 at the region covered by the nozzle surface so that at this region covered by the nozzle surface the surface 4 of the substrate 2 may be exposed to a first starting material A. The first starting material A may be fed together with a carrier g...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An apparatus and a method for processing a surface of a substrate exposes the surface of the substrate to alternating surface reactions of at least a first starting material and a second starting material according to the principles of atomic layer deposition method. A first starting material is fed on the surface of the substrate locally by a source by moving the source in relation to the substrate, and the surface of the substrate processed with the first starting material is exposed to a second starting material present in the atmosphere surrounding the source.

Description

BACKGROUND OF THE INVENTION[0001]The invention relates to an apparatus and a method for processing a surface of a substrate by exposing the surface of the substrate to alternating surface reactions of starting materials. Specifically, the present invention relates to an apparatus for processing a surface of a substrate by exposing the surface of the substrate to alternating surface reactions of at least a first starting material and a second starting material according to the principles of atomic layer deposition method. Particularly, the present invention relates also to a method for processing a surface of a substrate by exposing the surface of the substrate to alternating surface reactions of at least a first starting material and a second starting material according to the principles of atomic layer deposition method.[0002]Atomic Layer Deposition ALD method is based on deposition controlled by a surface, wherein the starting materials are conducted inside an ALD reactor onto the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): C23C16/455
CPCC23C16/45551C23C16/45544C23C16/45548
Inventor SOININEN, PEKKASNECK, SAMI
Owner BENEQ OY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products