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Method for measuring carrier mobility of organic semiconductor in frequency domain

A carrier mobility and organic semiconductor technology, which is applied in the direction of semiconductor/solid-state device testing/measurement, electrical measurement, and measurement devices, can solve the problems of unclear optical excitation boundaries and achieve the effect of simple test conditions

Inactive Publication Date: 2008-01-30
JIANGSU AIDE SOLAR ENERGY TECH CO LTD
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0003] The technical problem to be solved by the present invention is to overcome the problem of unclear optical excitation boundary in the prior art, and propose a method for measuring carrier mobility, setting a light-emitting detection area, so that a carrier of a symbol is detected The area can only enter and cannot exit, so that carriers of another sign enter the detection area from the other side, and the two types of carriers recombine in the detection area to emit light

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  • Method for measuring carrier mobility of organic semiconductor in frequency domain
  • Method for measuring carrier mobility of organic semiconductor in frequency domain
  • Method for measuring carrier mobility of organic semiconductor in frequency domain

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Embodiment Construction

[0021] Methods for measuring carrier mobility in organic semiconductors in the frequency domain:

[0022] 1. Prepare a device for measuring electron mobility, the structure of which is shown in Figure 1.

[0023] Dry the cleaned ITO glass in an oven, and then sequentially grow the luminescent detection layer on the ITO glass. The thickness of the hole transport material PVK is 12nm, the thickness of the isolation layer BCP that only transmits electrons and blocks holes is 12nm, and the layer to be tested is Alq3 The thickness of the 60nm, evaporated Al electrode. The material of the isolation layer can also be PBD or ZnS. The light-emitting detection layer can also be other hole transport materials: MEH-PPV or PPV, etc.

[0024] Prepare a device for measuring hole mobility, the structure of which is shown in Figure 2;

[0025] Dry the cleaned ITO glass in an oven, and then sequentially evaporate the thickness of the MEH-PPV layer to be measured on the ITO glass to 60nm, the...

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Abstract

The invention discloses a mobility measuring method of organic semiconductor carrier in the frequency domain, which is characterized by the following: preparing a (10-8s) organic luminous film of symbol carrier short luminous lifetime as detection layer; adapting the agitation frequency variation along with the luminous lightness to measure the carrier mobility that mu=(d2 / tv)(cm2 / s.v), wherein mu is mobility; d is layer thickness; t corresponds to the f0 semi-perimeter; v is crossover detected layer drop of potential; f0 is the needed time of detected sample.

Description

technical field [0001] The present invention relates to a method for measuring the carrier mobility of an organic semiconductor, which will evaluate: 1) the mobility of electrons in the organic semiconductor. 2) Mobility of holes in organic semiconductors. 3) The mobility of organic semiconductors varies with electric field strength. 4) Selection of time-frequency domain parameters for designing organic semiconductor electronics and light-emitting devices. Background technique [0002] In organic semiconductor devices, the key parameters that affect the electrical properties of the device are the positive and negative, the number, and the mobility of the carriers. Its mobility is very low, around 10 -2 cm 2 Under / V.s, the Hall measurement method in inorganic semiconductors cannot be used to measure the mobility. For organic semiconductor materials, the method of measuring the time of flight is generally used. It mainly uses light pulses to generate carriers, uses elect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/00H01L21/66G01N21/00G01N27/00
Inventor 徐征张福俊赵谡玲徐叙瑢
Owner JIANGSU AIDE SOLAR ENERGY TECH CO LTD