Circuit and method for addressing and reading crossover point diode storage array
A memory array and addressing circuit technology, applied in read-only memory, static memory, digital memory information, etc., can solve problems such as difficult to read and write memory cells
Inactive Publication Date: 2008-04-02
SAMSUNG ELECTRONICS CO LTD
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Problems solved by technology
Although such solutions are relatively simple to implement, they require a higher number of address lines for a known number of address lines than the previously described true multiplexing schemes
A further disadvantage is the introduction of crosstalk between addressed and unaddressed memory cells, which makes it difficult to read and write to a particular memory cell
Method used
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[0030] Write-once memory circuits, memory systems, addressing and readout circuits, and methods for producing, implementing, and using such circuits and systems are disclosed herein. In the following description, for purposes of explanation, specific nomenclature and specific implementation details are set forth in order to provide a thorough understanding of the invention. It will be apparent, however, to one skilled in the art that these details are not required to practice the invention.
[0031] In the following description, it is to be understood that where "data" is referred to, such "data" may be represented in a variety of ways depending on the context. For example, "data" in a memory cell can consist of a voltage level, a magnetic state, or a physical characteristic such as resistance that gives a measurable effect such as a voltage or current level or change to a readout circuit To represent. On the other hand, when on a bus or during transmission, this "data" can ...
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According to the theory of the invention, an addressing ciucuit for addressing a crossover point storage array is provided, in which the storage array comprises a first and a second set of electrodes arranged so that each electrode in the first set is crossed with each electrode in the second set, and a corresponding storage unit is formed at each crossover point of the first and the second set of electrodes. The addressing ciucuit includes a first set of address lines and a plurality of first diode elements coupled between the first set address lines and the first set electrodes, wherein each of said first set electrodes are coupled by said first diode elements to a respective unique subset of the first set address lines; and a second set of address lines and a plurality of second diode elements coupled between the second set address lines and the second set electrodes, wherein each of said second set electrodes are coupled by said second diode elements to a respective unique subset of the second set address lines.
Description
technical field [0001] The present invention relates to the field of digital memory circuits, and more particularly to addressing and reading memory cells in a cross-point diode memory array. Background technique [0002] Many consumer devices being constructed today generate and / or utilize ever larger amounts of digital data. For example, portable digital cameras used for still and / or moving pictures generate large amounts of digital data representing images. Each digital image may require up to several megabytes (MB) of data storage, and such storage must be available in the camera. To prepare for this type of data storage application, the memory should be relatively low in cost with sufficient capacity on the order of 10 MB to 1 gigabyte (GB). The memory should also be low in power consumption (eg <<1 Watt) and have relatively stable physical characteristics to handle portable battery powered operating environments. For archival storage, data only needs to be wri...
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IPC IPC(8): G11C8/00G11C8/10G11C17/06G11C17/18H01L27/10
CPCG11C8/10G11C17/18G11C17/06
Inventor C·陶斯R·埃尔德
Owner SAMSUNG ELECTRONICS CO LTD