Unlock instant, AI-driven research and patent intelligence for your innovation.

Structure of light-emitting diode

A technology of light-emitting diodes and reverse diodes, which is applied to electrical components, electric solid-state devices, circuits, etc., and can solve problems such as the decline in reliability of Zener diodes

Active Publication Date: 2008-06-04
FORMOSA EPITAXY INCORPORATION +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reliability of the Zener diode is related to its breakdown times. If the breakdown voltage of the Zener diode is low, too frequent breakdown times will lead to a decrease in the reliability of the Zener diode. Therefore, how to take into account the electrostatic discharge protection And the reliability of light-emitting diodes is a topic worth thinking about

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Structure of light-emitting diode
  • Structure of light-emitting diode
  • Structure of light-emitting diode

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0036] figure 1 is a schematic structural diagram of a light emitting diode according to the first embodiment of the present invention, and figure 2 It is a schematic diagram of an equivalent circuit of the light emitting diode structure of the first embodiment of the present invention. Please also refer to figure 1 and figure 2 The LED structure 100 of the present invention includes a substrate 110 , a patterned semiconductor layer 120 , a first wire 130 , a second wire 140 , an electrode 150 a , an electrode 150 b , an electrode 150 c , an electrode 150 d and an insulating layer 160 . Wherein, the material of the substrate 110 includes, for example, sapphire, silicon carbide, zinc oxide, silicon or glass, and the substrate 110 can be divided into a first region 10 and a second region 20 . The first area 10 and the second area 20 are respectively used to simultaneously form the light emitting diode element L and the electrostatic discharge protection diode element Z, and...

no. 2 example

[0044] image 3 is a schematic diagram of the light emitting diode structure of the second embodiment of the present invention, and Figure 4 It is a schematic diagram of an equivalent circuit of a light emitting diode structure according to the second embodiment of the present invention. Please also refer to image 3 and Figure 4 , the second embodiment is very similar to the first embodiment, and the main difference is that the insulating layer 260 of this embodiment is arranged on the second type doped semiconductor layer 126 and the first wire 130 of the electrostatic discharge protection diode element Z between. More specifically, the insulating layer 260 of this embodiment is, for example, formed on the electrode 150b. When the electrostatic discharge phenomenon occurs, the high voltage carried by the static electricity may be applied to the electrode 150c and the electrode 150d (wire 140). , the insulating layer 260 will break down and lose the effect of electrical...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Structure of light emitting diode (LED) with parasitic reverse diode includes base plate, patternized semiconductor layer, first lead wire, second lead wire, and insulating layer. The base plate possesses first area and second area. Patternized semiconductor layer includes first type doped semiconductor layer, second type doped semiconductor layer, and active layer between the said former two layers. First type doped semiconductor layer in the first area, active layer, and second type doped semiconductor layer constitute component of LED. First type doped semiconductor layer in the second area, active layer, and second type doped semiconductor layer, and insulating layer constitute protective diode component of static discharge. Structure of LED with protective diode component of static discharge can prevent LED from destroying caused by static discharge.

Description

technical field [0001] The present invention relates to a light emitting diode structure (LED structure), and in particular to a light emitting diode structure with electrostatic discharge protection function (ESD protection). Background technique [0002] In recent years, light-emitting diode elements can be said to be widely used, and are generally used in traffic lights (traffic lights), large-scale display boards, or as light sources for flat-panel displays. In order to prevent the LED from being damaged by electrostatic discharge, a common solution is to use an additional Zener diode in anti-parallel connection with the LED to form a voltage-stabilized circuit. When electrostatic discharge occurs, the high-voltage characteristics of static electricity will cause the Zener diode to operate in its breakdown voltage (breakdown voltage) region. At this time, the Zener diode connected in anti-parallel with the light-emitting diode can effectively prevent the light-emitting d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L27/15H01L33/44
Inventor 白士峯曾焕哲潘锡明简奉任
Owner FORMOSA EPITAXY INCORPORATION
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com