Film electric crystal array having spare signal line, and its manufacturing method
A technology of thin film transistors and backup signals, applied in nonlinear optics, instruments, optics, etc., can solve problems such as short circuit, open circuit, poor flatness, etc.
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[0096] Please refer to Figure 3A , is a schematic diagram of the first embodiment of the present invention, showing a thin film transistor 1, main signal line 30 and spare signal line 40, the thin film transistor includes a gate 12, a first isolation layer 14, a source 16 . A drain 18 , a gate channel 20 , a second isolation layer 22 and a pixel electrode layer 24 .
[0097] The gate 12 is fabricated on the upper surface of a glass substrate 10, and the spare signal line 40 is also fabricated on the upper surface of the glass substrate 10, and a predetermined distance is kept from the gate 12 to avoid mutual interference.
[0098] The first isolation layer 14 is fabricated above the glass substrate 10 and covers the above-mentioned gate electrode 12 and the spare signal line 40. At the same time, the first isolation layer 14 includes a first contact window 141 to expose part of the above-mentioned spare signal line. 40 on the upper surface.
[0099] The gate channel 20 is a...
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