Unlock instant, AI-driven research and patent intelligence for your innovation.

Selection device for a semiconductor memory device

A technology for selecting devices and storage devices, which is applied in information storage, static memory, digital memory information, etc., and can solve problems such as inability to adjust to the correct value, voltage drop, etc.

Inactive Publication Date: 2008-07-30
INFINEON TECH AG
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The problem with traditional selection devices is that, in the real case of read operations, especially in MRAM cells, the read current through multiple off-switching elements (especially devices in the form of transistors or the like) Causes a voltage drop (voltage drop), which means that the voltage or potential read on the access line device or bit line cannot be adjusted to the correct value by the sense amplifier device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Selection device for a semiconductor memory device
  • Selection device for a semiconductor memory device
  • Selection device for a semiconductor memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] figure 1 A schematic diagram of the basic design line arrangement of a semiconductor memory device 1 using an implementation of the selection device 10 of the present invention is presented.

[0026] The semiconductor storage device has a storage area 2 . The storage area 2 comprises a matrix-like arrangement of storage units 3 and storage components 3', and the storage unit 3 or storage components 3' are not intended to figure 1 Reading is performed in the state of the shown semiconductor memory device 1 and selected. In contrast, the storage element 3' in the storage area 2 is selected for reading. For this selection, the word line WLi together with the bit line BLk of the access line devices 6 and 4 is borrowed figure 1 The corresponding row selector or multiplexer 8 and column selector or multiplexer 7 are solved. Both the row selector 8 and the column selector 7 can be designed according to the present invention.

[0027] The selected word line Wli is at the w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a selection device for a semiconductor memory device. The aim of the invention is to prevent voltage drops caused by read currents in a column multiplexer (10) of a semiconductor memory device (1). To this end, the switch devices (12) of the selection device (10) comprise two switch elements (T1, T2). The invention is further characterized in that associated bit lines (4) can be interlinked with a potential sampling connection (22) or a current feed connection (24) of a respective associated sense amplifier (20) by means of the first and the second switch element (T1, T2).

Description

technical field [0001] The present invention relates to a selection device for a semiconductor memory device. Background technique [0002] A modern semiconductor memory device has a memory area comprising a plurality of memory elements or memory cells. The memory elements or memory cells in this case are usually formed in a matrix-like arrangement and can be addressed using access line devices, such as bit lines and word lines, to read and / or modify each A storage state or an information state of a storage component or a storage unit. [0003] In this context, for word lines, for example, addressing and associated access is usually achieved by using appropriate selection devices on a row selection basis, and for bit lines via a column selection. In this case, the access lines with memory cells arranged in a matrix, selected access lines, and non-selected lines form a nonreactive resistance network, which has special considerations Individual memory components or cell imp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16G11C7/12G11C11/15
CPCG11C11/16G11C11/1653G11C11/1673
Inventor H·-H·维赫曼恩
Owner INFINEON TECH AG