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Dot structure

A pixel structure and pixel electrode technology, applied in optics, instruments, electrical components, etc., can solve problems such as inconvenience, short circuit, and general product inappropriateness, so as to reduce the probability of short circuit and improve the effect of unexpected short circuit phenomenon

Active Publication Date: 2008-08-13
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of patterning the ITO thin film, due to factors such as process control, there will often be residual ITO residue 90, which will easily cause the adjacent pixel electrodes 110a, 110b to short-circuit each other. , which in turn causes the pixel structures 100a and 100b to fail to drive normally
[0005] It can be seen that the above-mentioned existing pixel structure obviously still has inconvenience and defects in structure and use, and needs to be further improved urgently.
In order to solve the problems existing in the pixel structure, the relevant manufacturers have tried their best to find a solution, but for a long time no suitable design has been developed, and the general products do not have a suitable structure to solve the above problems. This is obviously a problem. Issues that relevant industry players are eager to solve

Method used

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Embodiment Construction

[0047] In order to further explain the technical means and effects adopted by the present invention to achieve the intended invention purpose, the following is a detailed description of the specific implementation, structure, features and effects of the pixel structure proposed according to the present invention in conjunction with the accompanying drawings and preferred embodiments. The description is as follows.

[0048] figure 2 is a top view of a pixel structure according to a preferred embodiment of the present invention, and Figure 3A and Figure 3B it's for figure 2 Two kinds of structural cross-sectional views of the I-I' line in . Please see first figure 2 and Figure 3A As shown, the pixel structure 200 a of this embodiment is suitable for being electrically connected to a scan wiring 50 and a data wiring 80 . The pixel structure 200a includes an active device 210, a pixel electrode 220, a gate insulating layer 230, a protection layer 240 and a first pad la...

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Abstract

This invention relates to a picture element structure, which comprises one driving part, one picture element electrode, one isolation layer, one protective layer and one pad layer. The driving part is electrically connected with the scanning aligning line and data aligning line and the picture element electrode is connected with the driving part. The isolation layer stretches from the driving part into the electrode bottom and the protective layer stretches from the driving part into the electrode bottom to cover the isolation layer. The pad layer is set between the protective layer and the isolation layer with one groove between them locating between the scanning aligning line and the data aligning line and the picture electrode.

Description

technical field [0001] The present invention relates to a pixel structure, in particular to a pixel structure capable of avoiding the short circuit of adjacent pixel electrodes. Background technique [0002] The rapid progress of the multimedia society is mostly due to the rapid progress of semiconductor devices or display devices. As far as displays are concerned, cathode ray tubes (cathode ray tubes, CRTs) have been monopolizing the display market in recent years due to their excellent display quality and economical efficiency. However, for the environment where individuals operate most terminals / display devices on the table, or from the perspective of environmental protection, if the trend of energy saving is predicted, cathode ray tubes still have many problems in terms of space utilization and energy consumption, and There is no effective solution to the demands of lightness, thinness, shortness, smallness and low power consumption. Therefore, thin film transistor liq...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/136G02F1/1343G02F1/133H01L21/00
Inventor 来汉中
Owner AU OPTRONICS CORP
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