Electro-optical device and electronic apparatus

Abstract

To achieve lower electric power consumption in a configuration in which a memory circuit is provided for each pixel. A pixel circuit 20 includes TFTs 122, 124, 126, 128, a memory circuit 30, and a liquid crystal element 150. Both of the TFTs 122 and 124 (126, 128) among these turn on when an X selection line 211 and a Y selection line 311 corresponding to the pixel blocks to which the line themselves belong, are selected between a bit line 215 (complementary bit line 216) and the memory circuit 30. The memory circuit 30 holds the data bit supplied to the corresponding bit line 215 when both of the TFTs 122 and 124 (126, 128) turn on. The liquid crystal element 150 attains the display state of either on or off in compliance with the data bit held in the memory circuit 30.

Description

technical field [0001] The present invention relates to a technique for reducing power consumption of an electro-optical device having a memory circuit for each pixel. Background technique [0002] In portable electronic equipment, thinning and weight reduction are required, and electro-optical devices such as liquid crystal elements and organic EL elements that meet the requirements are used in electro-optical devices used as display devices for electronic equipment. Here, since this electro-optic device can rewrite (refresh) the state of each pixel in each frame regardless of the display content, the power consumption of the drive circuit for driving each pixel and its control circuit, etc., hinders low power consumption. . [0003] Therefore, a technique has been proposed in which a static memory circuit storing one bit is built into each pixel, and the pixel is turned on or off according to the bit stored in the memory circuit (see Patent Document 1). In this technolog...

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Problems solved by technology

[0008] However, when the data bit line and the complementary bit line are precharged, although data inversion does not occur, since both the data bit line and the complementary data bit line are at H level, one of them becomes the output of the storage circuit. In a short circuit state, a large current consumption will occur

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