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Capacitor wiring substrate, decoupling circuit and high frequency circuit

A technology of high-frequency circuits and wiring substrates, applied in the field of capacitors, can solve the problem of not being able to increase the electrostatic capacitance of multilayer capacitors 50, and achieve the effects of low-cost manufacturing methods, high-speed, large-capacity, and low-ESL

Inactive Publication Date: 2008-11-26
KYOCERA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0022] However, if this is done, since the areas of the non-conductor formation regions 63, 64 in the first and second conductor layers 53, 54 increase, there is a problem that the capacitance of the multilayer capacitor 50 cannot be increased.

Method used

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  • Capacitor wiring substrate, decoupling circuit and high frequency circuit
  • Capacitor wiring substrate, decoupling circuit and high frequency circuit
  • Capacitor wiring substrate, decoupling circuit and high frequency circuit

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Embodiment

[0080] generate figure 1 The multilayer capacitor 10 of the present invention is shown and Figure 4 In the illustrated conventional laminate 50, the capacitance C and the equivalent series inductance L were measured. Here, both dimensions of the multilayer capacitors 10 and 50 are 3.2 mm×3.2 mm, and a total of 36 first and second through conductors 5 a ( 55 ) and 6 a ( 56 ) are formed in a grid shape. Only the multilayer capacitor 10 has a total of two third and fourth through conductors 5b and 6b formed in the central portion.

[0081] the result of the measurement, Figure 4 In contrast to the illustrated conventional multilayer capacitor 50 where C=7.8 μF and L=20 pH, figure 1 In the illustrated multilayer capacitor 10 of the present invention, C=15 μF and L=8 pH.

[0082] As can be seen from these results, in the multilayer capacitor 10 of the present invention, since the total number of conductors of the first through conductors 5a and the second through conductors 6...

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Abstract

To provide a capacitor in which a low ESL and a high capacitance are realized.The capacitor has a stack member formed by stacking a plurality of dielectric layers, on the inside of which are arranged a plurality of internal electrodes arranged in the direction orthogonal to the direction of stacking, and a plurality of feed-through conductors electrically connected to the internal electrodes and penetrating the dielectric layers in the stacking direction, wherein the plurality of feed-through conductors is composed of a plurality of sorts of feed-through conductors different in the height positions of both upper ends and lower ends, while the plurality of sorts of feed-through conductors is provided with electrical inter-sort connections through connecting conductors arranged between contiguous dielectric layers. (C)2006,JPO&NCIPI.

Description

technical field [0001] The present invention relates to a capacitor, a wiring board, a decoupling circuit, and a high-frequency circuit, and more particularly, to a capacitor that can be favorably used in a high-frequency region, and a wiring board, a decoupling circuit, and a high-frequency circuit constructed using the capacitor. Background technique [0002] As a representative capacitor, a multilayer capacitor will be described as an example. [0003] In an equivalent circuit using a multilayer capacitor, when the electrostatic capacitance of the capacitor is denoted as C and the equivalent series inductance (ESL; equivalent series inductance) is denoted as L, the resonance frequency (f0) is denoted by [0004] f0=1 / [2π×√(L×C)] [0005] relationship representation. As can be seen from this formula, when the ESL is low, the resonance frequency (f0) increases, and it can be used in a higher frequency region. Therefore, in order to use the multilayer capacitor in the mic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/38H01G4/30H01G4/12
Inventor 佐藤恒
Owner KYOCERA CORP