Method for fabricating semiconductor device with deep opening
A semiconductor and device technology, applied in the field of semiconductor device manufacturing, can solve problems such as unit failure, semiconductor device yield decline, double-bit failure, etc.
Inactive Publication Date: 2009-03-25
SK HYNIX INC
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Problems solved by technology
[0014] In addition, the above-mentioned limitations can cause double-bit failures, single-bit failures, or direct current (DC) failures, resulting in decreased yield of semiconductor devices
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[0056] According to an exemplary embodiment of the present invention, when a deep contact hole for a capacitor contact is formed, a bending-resistant spacer is formed. In addition to capacitor contacts, the method according to the invention can also be applied to form deep contact holes. For example, in a metal line process, the opening is a contact hole.
[0057] According to an exemplary embodiment consistent with the present invention, the contact hole or opening is enlarged using a wet etching process before the contact hole opening or opening is completed. Since the anti-bending spacer is formed on the sidewall of the contact hole or opening, a maximum open opening configuration can be achieved.
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A method for fabricating a semiconductor device with a deep opening is provided. The method includes: forming an insulation layer on a substrate; selectively etching the insulation layer to form first openings; enlarging areas of the first openings; forming anti-bowing spacers on sidewalls of the enlarged first openings; and etching portions of the insulation layer remaining beneath the enlarged first openings to form second openings.
Description
[0001] This application claims priority to Korean Patent Applications KR2005-58886 and KR 2005-58893, both filed with the Korean Patent Office on Jun. 30, 2005, the entire contents of which are incorporated herein by reference. technical field [0002] The invention relates to a method for manufacturing a semiconductor device, more particularly to a method for manufacturing a semiconductor device with deep contact holes. Background technique [0003] As the design scale of a dynamic random access memory (DRAM) has been reduced, the thickness of a photoresist pattern used as a mask to form a contact hole has also been reduced. Thus, if the photoresist pattern is used alone to form the contact hole, the edge thickness of the photoresist pattern is insufficient. For this reason, a hard mask is currently used when forming a contact hole. However, if the hard mask remains after the contact hole formation, the presence of the hard mask often causes the interface layer to rise due...
Claims
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IPC IPC(8): H01L21/311H01L21/768
CPCH01L21/31116H01L21/31144H01L21/76816
Inventor 赵瑢泰李海朾曹祥薰
Owner SK HYNIX INC