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Method of controlling photoresist stripping process and regenerating photoresist stripper composition based on near infrared spectrometer

A technology of photoresist and photoresist layer, applied in optics, analytical materials, optomechanical equipment, etc., can solve the problems of inability to collect strippers in real time and analyze real-time strippers

Inactive Publication Date: 2009-04-01
DONGJIN SEMICHEM CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, currently available on-line analytical equipment is at best capable of automated sampling and thus cannot perform the required real-time stripper analysis
Furthermore, information on the processing of the stripper used in the lithography process cannot be collected in real time with currently available in-line analysis equipment

Method used

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  • Method of controlling photoresist stripping process and regenerating photoresist stripper composition based on near infrared spectrometer
  • Method of controlling photoresist stripping process and regenerating photoresist stripper composition based on near infrared spectrometer
  • Method of controlling photoresist stripping process and regenerating photoresist stripper composition based on near infrared spectrometer

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Embodiment Construction

[0028] Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

[0029] During the manufacture of semiconductor devices or liquid crystal displays, a photoresist stripper is sprayed onto a substrate covered with a patterned photoresist layer so that the photoresist can be stripped from the substrate agent layer. At this point, the photoresist stripper containing the stripped photoresist is collected into a stripper collection box located below the substrate. When the amount of the stripping agent in the collection box reaches a predetermined value, the stripping agent is delivered to the stripping agent storage box by a delivery pump. Since each component of the release agent has its characteristic light absorption wavelength, the components of the release agent can be analyzed in real time by detecting the light absorption of the release agent in a near-infrared (NIR) wavelength range using a NIR spectrometer.

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Abstract

In a method of controlling a photoresist stripping process for fabricating a semiconductor device or a liquid crystal display device, the composition of the stripper used in stripping the photoresist layer is first analyzed with the NIR spectrometer. The state of the stripper is then determined by comparing the analyzed composition with the reference composition. In case the life span of the stripper comes to an end, the stripper is replaced with a new stripper. By contrast, in case the life span of the stripper is left over, the stripper is delivered to the next photoresist stripping process. This analysis technique may be applied to the photoresist stripper regenerating process in a similar way.

Description

technical field [0001] The present invention relates to a method for controlling a photoresist stripping process based on a near-infrared (NIR) spectrometer and a method for regenerating components of a photoresist stripper, and more particularly, the present invention relates to automatic real-time analysis of manufactured semiconductor devices or liquid crystals The stripping agent composition used in the photolithography process of the display, thereby accurately and effectively controlling the stripping process and regenerating the stripping agent while reducing its required time period, NIR spectrometer-based photoresist stripping process control method and photoresist Method for regeneration of stripping agent components. Background technique [0002] As large-scale semiconductor devices or liquid crystal displays become more and more options for electronic consumers, the number of solutions used to manufacture such devices has skyrocketed. In this case, these solutio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42G01N21/35H01L21/027H01L21/311
CPCG01N21/359G03F7/425G03F7/426G01N21/3563G03F7/422H01L21/31133G03F7/42
Inventor 朴美仙金钟民朴兑濬姜哲佑任润吉
Owner DONGJIN SEMICHEM CO LTD
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