Tin dioxide nano grass-blade gas sensor and its making method and use thereof
A technology of gas sensor and tin dioxide, which is applied in the field of nanosensors, can solve the problems of complex gas sensor preparation methods and harsh preparation conditions, and achieve the effects of good conduction effect, increased sensitivity, and less time-consuming
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Embodiment 1
[0031] Print out the template of the designed comb-shaped intersecting electrode pattern on the transparent film (such as figure 1 shown), the distance between the comb-shaped intersecting electrodes is 200nm, on a piece of 1×1mm 2 Pure silicon wafers (such as figure 2 As shown) a layer of silicon dioxide film 22 is oxidized on 21 as an insulating layer, and the thickness of the insulating layer is about 0.5 μm. A layer of photoresist is coated on this insulating layer, and the template ( Such as figure 1shown) is fixed on the prepared silicon dioxide insulating layer 22, after exposure treatment, the photoresist at the cross electrode position is peeled off, the template is removed, and the exposed silicon dioxide insulating layer Layer 22 is plated with a cadmium film with a thickness of 30nm, and on this layer of cadmium film, a gold film with a purity of 99.999% is plated with a thickness of about 60nm, and the silicon wafer 21 prepared by the above method is put into...
Embodiment 2
[0036] Print out the template of the designed comb-shaped intersecting electrode pattern on the transparent film (such as figure 1 shown), the distance between the comb-shaped intersecting electrodes is 300nm, on a piece of 3×3mm 2 Pure silicon wafers (such as figure 2 As shown) 21 is oxidized with a layer of silicon dioxide film 22 as an insulating layer, and the thickness of the insulating layer is about 1 μm. A layer of photoresist is coated on this layer of insulating layer, and the template (such as figure 1 shown) is fixed on the prepared silicon dioxide insulating layer 22, after exposure treatment, the photoresist at the cross electrode position is peeled off, the template is removed, and the exposed silicon dioxide insulating layer Layer 22 is plated with a cadmium film with a thickness of 60nm, and a gold film with a purity of 99.999% is plated on the cadmium film with a purity of about 80nm, and the silicon wafer 21 prepared by the above method is put into alcoh...
Embodiment 3
[0038] Print out the designed comb-shaped cross-electrode pattern template on the transparent film (such as figure 1 shown), the distance between the comb-shaped intersecting electrodes is 400nm, on a piece of 6×6mm 2 Pure silicon wafers (such as figure 2 As shown) a layer of silicon dioxide film 22 is oxidized on 21 as an insulating layer, and the thickness of the insulating layer is about 1.5 μm. A layer of photoresist is coated on this insulating layer, and the template (such as figure 1 shown) is fixed on the prepared silicon dioxide insulating layer 22, after exposure treatment, the photoresist at the cross electrode position is peeled off, the template is removed, and the exposed silicon dioxide insulating layer Layer 22 is plated with a cadmium film with a thickness of 80nm, and a gold film with a purity of 99.999% is plated on this layer of cadmium film with a purity of about 100nm, and the silicon wafer 21 prepared by the above method is put into acetone Soak unt...
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Abstract
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