Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Bipath parent oscillation source device

A source device, local oscillator circuit technology, applied in multiplexing communication, time division multiplexing system, electrical components, etc., to reduce difficulty, meet in-band spurious and adjacent channel suppression, and save circuit costs.

Inactive Publication Date: 2009-06-17
ZTE CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the problem in the prior art that the two-way local oscillators are isolated only by switches, and the signal radiation and crosstalk are serious under the condition of high transmission power, and propose a dual-way local oscillator source device with high isolation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bipath parent oscillation source device
  • Bipath parent oscillation source device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0012] figure 1 It is a schematic diagram of the present invention. Such as figure 1 As shown, the dual-path local oscillator source quasi-device proposed by the present invention includes the same but mutually independent local oscillator circuit 1 and local oscillator circuit 2, and a single-pole double-throw radio frequency switch; the local oscillator circuit 1 and local oscillator circuit 2 output The local oscillator signal is output after being isolated and gated by the RF switch. The radio frequency SPDT switch plays the role of gating one of the two local oscillator signals. The first channel is selected when the control signal added to it is high level, and the second channel is selected when it is low level. The device also includes a power control circuit, the power control circuit is used to control when the power of the local...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The device includes two identical and independent local oscillating circuits 1 and 2, a single-pole double-throw radio frequency switch, and a power supply control circuit. Local oscillator signals from local oscillator circuits 1 and 2 are insulated, gated and output. The power supply control circuit turns power supply of local oscillator circuit 1 to on and power supply of local oscillator circuit 2 to off; as well as turns power supply of local oscillator circuit 1 to off and power supply of local oscillator circuit 2 to on. The invention manages power supply of amplifier and keeps synchronization with switch so as to reduce signal leaking and radiation effectively, raise isolation and purity of two Local oscillator signals etc.

Description

technical field [0001] The present invention relates to local oscillator circuits in transceivers of communication systems. Background technique [0002] In the transceiver circuit of the TDMA communication system, the local oscillator circuit is often required to provide high-quality local oscillator signals and fast frequency switching in different time slots. The single local oscillator source is between fast frequency switching and high-quality signals. There is a contradiction, while realizing fast frequency hopping in a limited guard time slot, it will inevitably bring a series of negative effects such as the decrease of modulation accuracy, the deterioration of receiving sensitivity, the increase of spurs, and the decrease of blocking performance. At present, the existing technology usually adopts the way of switching two-way local oscillator sources to provide fast carrier frequency points, and uses the combination switch to control the signal selection between the t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H04J3/00H04B1/06
Inventor 杨剑尹成刚余敏德
Owner ZTE CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com