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Composite ferroelectric thin film and preparation method thereof

A ferroelectric thin film and composite technology, applied in the field of ferroelectric thin films and their preparation, to achieve the effects of low dielectric loss and good electrical properties

Inactive Publication Date: 2009-08-05
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, so far, there are few reports on the preparation of composite ferroelectric thin films of microwave dielectric materials and barium strontium titanate by sol-gel method.

Method used

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  • Composite ferroelectric thin film and preparation method thereof
  • Composite ferroelectric thin film and preparation method thereof
  • Composite ferroelectric thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Example 1: In Al 2 o 3 2 mole percent BaMg grown on the substrate 6 Ti 6 o 19 and 98% Ba (1-x) Sr x TiO 3 Composite film with x=0.50:

[0025] A. The chemical raw materials used are barium acetate, strontium acetate, magnesium nitrate and tetra-n-butyl titanate, the solvent is glacial acetic acid, ethylene glycol ether and water, and acetylacetone is the chelating agent. Ba (1-x) Sr x TiO 3 The chemical ratio of x=0.50 weighed 1.2771g, 1.0736g were heated to boiling in 10mL glacial acetic acid solution, and when cooled to room temperature, 3.4731g of tetra-n-butyl titanate and acetylacetone with a molar ratio of 1:2 2.0024g of the mixed solution was added to form Ba (1-x) Sr x TiO 3 (x=0.50) solution.

[0026] B. According to the molar percentage of Mg being 25%, weigh 0.6410g of magnesium nitrate and dissolve it in 10mL of ethylene glycol ether, add 5mL of deionized water, and stir until completely dissolved. Finally, the magnesium nitrate solution was a...

Embodiment 2

[0031] It differs from Example 1 in that the amount of barium acetate, strontium acetate, and tetra-n-butyl titanate is changed so that the generated Ba (1-x) Sr x TiO 3 x=0.55, the preparation method is the same as that of Example 1.

[0032] Finally, BaMg with a molar percentage of 2% was obtained 6 Ti 6 o 19 and 98% Ba (1-x) Sr x TiO 3 Composite ferroelectric thin film with x=0.55. The electrical performance test adopts the photolithography process to fabricate Au interdigitated electrodes on the upper surface, with a thickness of about 300nm.

[0033] The X-ray diffraction analysis spectrum of the composite ferroelectric thin film that embodiment 2 makes is as Figure 4 As shown, the X-ray diffraction analysis pattern shows that the two component films all present BaMg 6 Ti 6 o 19 With the BST two-phase coexistence structure, no other impurity phases are generated; the dielectric constant of the composite ferroelectric thin film obtained in Example 2 is shown i...

Embodiment 3

[0035] Its difference with embodiment 1,2 is that, changes the consumption of magnesium nitrate, and component adopts Ba (1-x) Sr x TiO 3 (x=0.50), the preparation method of the film is the same as that of Example 1.

[0036] Finally, BaMg with a molar percentage of 3% was obtained 6 Ti 6 o 19 and 97% Ba (1-x) Sr x TiO 3 (x=0.50) composite ferroelectric thin film. The electrical performance test adopts the photolithography process to fabricate Au interdigitated electrodes on the upper surface, with a thickness of about 300nm.

[0037] The X-ray diffraction analysis spectrum of the composite ferroelectric thin film that embodiment 3 makes is as Figure 7 As shown, the X-ray diffraction analysis pattern shows that the two component films all present BaMg 6 Ti 6 o 19 With the BST two-phase coexistence structure, no other impurity phases are generated; the dielectric constant of the composite ferroelectric thin film obtained in Example 3 is shown in the spectrum analys...

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Abstract

The invention discloses a composite ferroelectric thin film, which is characterized in that it is composed of 1%-3% BaMg6Ti6O19 and 97%-99% Ba(1-x)SrxTiO3 according to mole percentage, wherein x=0.2-0.7. The composite ferroelectric thin film of the invention has good electrical performance, dielectric adjustability, low dielectric loss, and can be used as microwave material.

Description

technical field [0001] The invention relates to a novel ferroelectric thin film and a preparation method thereof. Background technique [0002] The research on ferroelectric thin films mainly focuses on BaTiO 3 (BT), (Ba,Sr)TiO 3 (BST), Pb(Zr,Ti)O 3 (PZT), (Pb, La)TiO 3 (PLT), (Pb,La)(Zr,Ti)O 3 (PLZT), Ba(Zr,Ti)O 3 (BZT) Wait. Among them, BST thin films have become the focus of research because of their good dielectric properties such as high dielectric constant, low dielectric loss, and small leakage current. However, BST thin films have large dielectric loss at microwave frequencies, which limits the application of BST thin films in microwave devices. Therefore, there is an urgent need for a new type of material with an appropriate dielectric constant and lower dielectric loss [0003] Currently researched and used more composite thin film preparation techniques mainly include sputtering method, laser flash evaporation (PLD) and sol-gel method. Sputtering and lase...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/465C04B35/622
Inventor 翟继卫高丽娜
Owner TONGJI UNIV