Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor wafer including semiconductor chips divided by scribe line and process-monitor electrode pads formed on scribe line

A semiconductor and scribing line technology, applied in semiconductor/solid-state device testing/measurement, semiconductor device, semiconductor/solid-state device manufacturing, etc., can solve problems such as increased manufacturing costs

Inactive Publication Date: 2009-08-05
RICOH MICROELECTRONICS CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, manufacturing costs increase

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor wafer including semiconductor chips divided by scribe line and process-monitor electrode pads formed on scribe line
  • Semiconductor wafer including semiconductor chips divided by scribe line and process-monitor electrode pads formed on scribe line
  • Semiconductor wafer including semiconductor chips divided by scribe line and process-monitor electrode pads formed on scribe line

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0091] Figure 1A and 1B is a schematic illustration for describing a semiconductor wafer 1 according to an embodiment of the present invention. More specifically, Figure 1A To show a plan view near the scribing line of the semiconductor wafer 1, Figure 1B for along Figure 1A A cross-sectional view taken along line A-A. figure 2 It is a plan view showing the overall structure of the semiconductor wafer 1 according to the embodiment of the present invention. Figure 3A and 3B It is a schematic diagram for describing a part of a process monitoring device placed on a scribing line according to an embodiment of the present invention. More specifically, Figure 3ATo show a plan view of a part of the process monitoring device, Figure 3B for along Figure 3A Sectional view taken along line B-B. The semiconductor wafer 1 according to the embodiment of the present invention has a three-layer metal wiring structure.

[0092] Such as figure 2 As shown, a semiconductor w...

no. 2 example

[0138] Figure 16A and 16B is a schematic diagram illustrating a semiconductor wafer 101 according to an embodiment of the present invention. More specifically, Figure 16A To show a plan view near the scribing line 105 of the semiconductor wafer 101, Figure 16B for along Figure 16A Sectional view taken along line A-A. Figure 17 is a plan view showing the overall structure of the semiconductor wafer 101 according to the embodiment of the present invention. 18A and 18B are schematic diagrams for describing a process monitoring device placed on a scribing line according to an embodiment of the present invention. More specifically, FIG. 18A is a plan view showing a portion of a process monitoring device, Figure 18B It is a cross-sectional view taken along line B-B in FIG. 18A. The semiconductor wafer 101 according to the embodiment of the present invention has a three-layer metal wiring layer structure.

[0139] Such as Figure 17 As shown, a semiconductor wafer 101 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

The present invention discloses a semiconductor wafer having a scribe line dividing the semiconductor wafer into a matrix of plural semiconductor chips. The semiconductor wafer includes a polysilicon layer, a poly-metal interlayer insulation film formed on the polysilicon layer, and a first metal wiring layer formed on the poly-metal interlayer insulation film. The semiconductor wafer includes a process-monitor electrode pad formed on a dicing area of the scribe line. The process-monitor electrode pad has a width greater than the width of the dicing area. The process-monitor electrode pad includes a contact hole formed in the poly-metal insulation film for connecting the first metal wiring layer to the polysilicon layer.

Description

technical field [0001] The present invention relates to a semiconductor wafer, and more particularly, to a semiconductor wafer having a plurality of semiconductor chips divided by scribe lines and process monitoring electrodes formed on the scribe lines. Background technique [0002] In a typical slicing process of a semiconductor wafer (slicing target) for dividing a plurality of semiconductor chips from the semiconductor wafer, a ring-shaped blade having, for example, diamond particles attached thereto rotates at high speed and comes into contact with a scribe line formed on the semiconductor wafer . A semiconductor wafer is sliced ​​into a plurality of semiconductor chips by contacting a rotating blade on a scribing line. For better slicing performance, various parameters are optimized. These parameters include, for example, blade thickness, blade rotational speed, platform speed, and kerf depth. [0003] A semiconductor wafer has a layered structure in which various t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66B22D17/20H01L21/3205H01L21/822H01L23/52H01L27/04
CPCH01L2224/05
Inventor 吉田雅昭神埜聪
Owner RICOH MICROELECTRONICS CO LTD