Nano width resonance structure on silicon sheet of SOI and preparation process thereof

Abstract

A nano-width resonance structure on the SOI (Silicon-on-insulator) silicon chip features that the anisotropic wet corrosion characteristic of the silicon chip with crystal orientation (110) is used, the includes angle between mask pattern and crystal orientation is precisely controlled, the crystal orientation can be automatically corrected by anisotropic wet corrosion, the low-speed corrosion can decrease width, and the concentrated B solution can automatically stop the corrosion to control the form of anchor point and drive electrode. After a nano-beam whose width is less than 100 nm is prepared, the drive / sensing electrode are prepared at its both sides to obtain the nano resonance structure.

Description

technical field [0001] The invention relates to a nanometer-width resonant structure on a silicon-on-insulator (SOI) silicon wafer based on anisotropic etching technology and a manufacturing method thereof, more precisely a kind of SOI silicon wafer on a (110) crystal plane The invention discloses a single crystal silicon nano-beam resonant structure with a width less than 100nm and a manufacturing method thereof, belonging to the field of micron / nano processing. Background technique [0002] Nano-Electro-Mechanical-System technology (Nano-Electro-Mechanical-System, NEMS) is an important part of nanotechnology [A.N.Cleland, Foundations of Nanomechanics.ISBN] through the integration of nano-devices and micro-devices, circuits using nano-effects to achieve significant improvement in device performance 3-540-43661-8, Springer-Verlag Berlin Heidelberg 2003.]. Nanoresonant structure is one of the basic structures of nanoelectromechanical devices, and is the core structure of var...

AI Technical Summary

Problems solved by technology

The main disadvantages of advanced processing technologies such as electron beam lithography and FIB are low processing capacity, not suitable for mass production, and very expensive equipment

In addition, the existing dry etching technology with high control precision generally forms a lattice damage layer with a thickness of tens of nanometers on the surface of the nanobeam, which seriously affects the mechanical and electrical properties of the nanobeam.

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