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Semiconductor luminescent part and its making method

A light-emitting element and semiconductor technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult control, poor stability of light-emitting diode finished products, high production cost, etc.

Inactive Publication Date: 2009-08-12
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, the n+ type reverse tunneling layer 18 has a complex manufacturing process and is not easy to control, resulting in poor stability of the finished product of the light emitting diode.
The n+ type reverse tunneling layer 18 also has a relatively high production cost

Method used

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  • Semiconductor luminescent part and its making method
  • Semiconductor luminescent part and its making method
  • Semiconductor luminescent part and its making method

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0030] see Figure 2A to Figure 2G . Figure 2A to Figure 2G is a method for manufacturing a semiconductor light emitting device according to a preferred embodiment of the present invention.

[0031] First, if Figure 2A As shown, the method according to the preferred embodiment of the present invention is to prepare a substrate 31 and form a first conductivity type semiconductor material layer 32 on the substrate 31 .

[0032] In a specific embodiment, the material of the substrate 31 may be silicon (Si), gallium nitride (GaN), aluminum nitride (AlN), sapphire (Sapphire), spinel (Spinnel), silicon carbide (SiC), Gallium arsenide (GaAs), aluminum oxide (Al 2 o 3 ), lithium gallium dioxide (LiGaO 2 ), lithium aluminum dioxide (LiAlO 2 ) or Magnesium Tetroxide (MgAl 2 o 4 ).

[0033] In a specific embodiment, the first conductive type semiconductor material layer 32 is formed of gallium nitride (GaN) material.

[0034] In a specific embodiment, the first conductivity t...

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Abstract

The invention provides a semiconductor light-emitting element with a II-V (or II-IV-V) compound contact layer and a manufacturing method thereof. A semiconductor light-emitting element according to a preferred embodiment of the present invention includes a substrate, a first conductivity type semiconductor material layer, a light emitting layer, a first electrode, a second conductivity type semiconductor material layer, a II-V (or II-IV-V group ) compound contact layer, transparent conductive layer and second electrode. The presence of the II-V (or II-IV-V) compound contact layer improves the ohmic contact between the second conductivity type semiconductor material layer and the transparent conductive layer.

Description

technical field [0001] The invention relates to a semiconductor light emitting device, in particular to a semiconductor light emitting device with a II-V (or II-IV-V) compound contact layer. Background technique [0002] Light emitting diodes can be used in a wide variety of devices, such as optical display devices, traffic signs, communication devices, and lighting devices. Light emitting diodes are different from those known light sources and are more applicable to different industrial fields. [0003] LEDs consume less power and react faster than the well-known tungsten bulbs. Furthermore, the light emitting diode has better lighting efficiency, longer service life, no harmful substances like mercury, smaller volume and lower power consumption. [0004] The light-emitting principle of light-emitting diodes is that when forward biased, electrons and holes in P-type and N-type semiconductors can combine into photons in the light-emitting layer to generate light. Since th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 蔡炯棋蔡宗良李玉柱
Owner EPISTAR CORP