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Semiconductor device, mounting structure, electro-optical device and electronic member manufacture method

A technology for electronic components and electro-optical devices, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., and can solve problems such as poor installation, cracking of the first conductive layer, uneven connection resistance, etc. Small change in conductivity, increase suppressing effect

Inactive Publication Date: 2009-08-26
EPSON IMAGING DEVICES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in the above-mentioned laminated structure, the first conductive layer is less ductile than the second conductive layer, so when the protruding electrodes are deformed during mounting, the first conductive layer cracks, causing cracks in the second conductive layer, etc.
Therefore, there is a problem that the connection resistance of the mounting part becomes uneven or large, and in extreme cases, mounting failure occurs.

Method used

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  • Semiconductor device, mounting structure, electro-optical device and electronic member manufacture method
  • Semiconductor device, mounting structure, electro-optical device and electronic member manufacture method
  • Semiconductor device, mounting structure, electro-optical device and electronic member manufacture method

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Embodiment Construction

[0038] Composition of electronic components (semiconductor devices)

[0039] Next, embodiments of the present invention will be described in detail with reference to the drawings. figure 1 is a partial plan view of an electronic component or a semiconductor device according to this embodiment, figure 2 is a partial longitudinal sectional view of the electronic component or semiconductor device. In this embodiment, the base electrode 11 made of aluminum or the like is formed on the surface of the substrate 10 made of a semiconductor substrate such as single crystal silicon, and further, the base electrode 11 is formed of silicon oxide, silicon nitride, etc. Part 11 of the insulating layer 12 is exposed through the opening 12a. Protruding electrodes P are formed on the insulating layer 12 . The protruding electrodes are composed of protrusions 13 and conductive layers 14 which will be described in detail later.

[0040] On the insulating layer 12, protrusions 13 made of res...

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Abstract

A semiconductor device, a mounting structure, an electro-optical apparatus, an electronic system, and a method for manufacturing an electronic component are provided to improve the stabilization of contact resistance by preventing a crack on a conductive layer due to deformation of a bump. A protrusion electrode(P) has a bump(13) made of resin, a base layer(14a) formed on the bump, and a surface conductive layer(14b) formed on the base layer. The base layer is comprised of material having ductility lower than the surface conductive layer. The base layer is arranged on the vertex of the protrusion electrode. The base layer is made of material whose adhesion for the bump is greater than the surface conductive layer. A base electrode(11) is formed on a region except for the region on which the bump is formed. The surface conductive layer is conductively connected to the base electrode. The base layer is made of a conductive material. The surface conductive layer is conductively connected to the base electrode through the base layer.

Description

technical field [0001] The present invention relates to a semiconductor device, a mounting structure, an electro-optical device, an electronic device, and a method of manufacturing an electronic component, and particularly relates to a structure of a protruding electrode provided on an electronic component. Background technique [0002] Generally, it is known that various electronic components such as semiconductor devices are equipped with protruding electrodes protruding from the surface of a base. The protruding electrodes are closely bonded to the substrate on the mounted side to achieve conduction, and metal protruding electrodes formed by thickly plating a metal such as Au on a seed electrode (sid electrode) are generally used. As a mounting method using such protruding electrodes, for example, a method of mounting a driving IC on a substrate of various displays is known. [0003] Furthermore, as the protruding electrodes, it has been proposed to use resin protrusions...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/485H01L25/00H01L23/488H01L21/60
CPCH01L24/11H01L2924/01015H01L2224/11H01L2924/00012H01L23/48
Inventor 斋藤淳
Owner EPSON IMAGING DEVICES CORP