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Exposure equipment and element manufacturing method

An exposure device and component technology, which is applied in the direction of photolithographic process exposure device, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of liquid outflow in the liquid immersion area, influence of photoresist, performance degradation of production components, etc. , to achieve the effect of inhibiting expansion and inhibiting large changes

Inactive Publication Date: 2009-10-07
NIKON CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Water marks may affect the photoresist on the substrate, and may cause performance degradation of the produced components due to this effect
Also, it may be difficult to maintain the liquid immersion area at the desired size as the scanning speed becomes higher
In addition, it is also possible that as the scanning speed becomes higher, the liquid in the liquid immersion area will flow out

Method used

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  • Exposure equipment and element manufacturing method
  • Exposure equipment and element manufacturing method
  • Exposure equipment and element manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0087] Embodiments of the present invention will be described below with reference to the drawings, but the present invention is not limited thereto.

[0088] 1st embodiment

[0089] figure 1 It is a schematic configuration diagram showing the exposure apparatus of this embodiment. figure 1 Among them, the exposure apparatus EX has: a mask stage MST capable of holding and moving a mask M; a substrate stage PST capable of holding and moving a substrate P; an illumination optical system IL illuminated by exposure light EL and held on the mask. The mask M of the stencil stage MST; the projection optical system PL for projecting the pattern image of the mask M illuminated by the exposure light EL onto the substrate P held on the substrate stage PST; and the control device CONT for overall control Operation of the entire exposure apparatus EX.

[0090] The exposure device EX of this embodiment is a liquid immersion exposure device applicable to the liquid immersion method, whi...

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Abstract

The exposure device (EX) irradiates the substrate (P) with exposure light (EL) through the projection optical system (PL) and the liquid (LQ) to expose the substrate (P). The exposure apparatus (EX) includes a liquid immersion mechanism (1) for supplying a liquid (LQ) and recovering the liquid (LQ). The liquid immersion mechanism (1) has a flat surface configured to be parallel to the substrate and surround the optical path of the exposure light; the liquid immersion mechanism has a liquid recovery port, and the liquid recovery port is disposed opposite to the The optical path of the exposure light is outside the flat surface and facing the substrate; the liquid immersion mechanism (1) has a porous member, and the porous member has a surface facing the substrate (P) and opposite to the substrate (P). The surface is an inclined slope (2); the liquid recovery port includes the slope of the porous member; the slope is formed so that the distance between the slope and the surface of the substrate increases as the distance between it and the optical axis of the projection optical system increases.

Description

technical field [0001] The present invention relates to an exposure device, an exposure method, and a device manufacturing method for exposing a substrate through a liquid. Background technique [0002] A semiconductor device or a liquid crystal display device is manufactured by transferring a pattern formed on a mask onto a photosensitive substrate, which is a so-called photolithography method. The exposure device used in this photolithography step has a mask stage for supporting the mask and a substrate stage for supporting the substrate. The pattern of the stencil is transferred to the substrate. In recent years, projection optical systems are expected to have higher resolution in order to cope with higher integration of device patterns. The resolution of the projection optical system increases as the exposure wavelength used becomes shorter, or as the numerical aperture of the projection optical system increases. Therefore, the exposure wavelength used by the exposure...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027G03F7/20
Inventor 长坂博之奥山猛
Owner NIKON CORP